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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMT40R011M2HXTMA1SIC-MOS Infineon Technologies |
1,927 |
|
Tabla de datos |
CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 13.4A (Ta), 144A (Tc) | 15V, 18V | 14.4mOhm @ 37.1A, 18V | 5.6V @ 13.3mA | 85 nC @ 18 V | +23V, -7V | 3770 pF @ 200 V | - | 3.8W (Ta), 429W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
|
IMZC120R017M2HXKSA1IMZC120R017M2HXKSA1 Infineon Technologies |
240 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 97A (Tc) | 15V, 18V | 17mOhm @ 40A, 18V | 5.1V @ 12.7mA | 89 nC @ 18 V | +23V, -7V | 2910 pF @ 800 V | - | 382W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
|
AIMBG120R030M1XTMA1SIC_DISCRETE Infineon Technologies |
1,708 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 70A (Tc) | 18V, 20V | 38mOhm @ 27A, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | +23V, -5V | 1738 pF @ 800 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
|
|
AIMZA75R020M1HXKSA1AUTOMOTIVE_SICMOS Infineon Technologies |
190 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 75A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | 5.6V @ 11.7mA | 67 nC @ 18 V | +23V, -5V | 2217 pF @ 500 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
|
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IMBG65R015M2HXTMA1SILICON CARBIDE MOSFET Infineon Technologies |
1,000 |
|
Tabla de datos |
CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 115A (Tc) | 15V, 20V | 18mOhm @ 64.2A, 18V | 5.6V @ 13mA | 79 nC @ 18 V | +23V, -7V | 2792 pF @ 400 V | - | 416W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
|
IPQC60R010S7XTMA1MOSFET Infineon Technologies |
750 |
|
Tabla de datos |
CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.08mA | 318 nC @ 12 V | ±20V | - | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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IMZA75R016M1HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
210 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 89A (Tj) | 15V, 20V | 15mOhm @ 41.5A, 20V | 5.6V @ 14.9mA | 81 nC @ 18 V | +23V, -5V | 2869 pF @ 500 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
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AIMZA75R016M1HXKSA1SICFET N-CH 750V 89A PG-TO247-4 Infineon Technologies |
213 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 89A (Tc) | 15V, 20V | 22mOhm @ 41.5A, 18V | 5.6V @ 14.9mA | 81 nC @ 18 V | +23V, -5V | 2869 pF @ 500 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
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IMW65R010M2HXKSA1IMW65R010M2HXKSA1 Infineon Technologies |
396 |
|
Tabla de datos |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 130A (Tc) | 15V, 20V | 9.1mOhm @ 92.1A, 20V | 5.6V @ 18.7mA | 112 nC @ 18 V | +23V, -7V | 4001 pF @ 400 V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
|
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IMZA65R010M2HXKSA1IMZA65R010M2HXKSA1 Infineon Technologies |
400 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 144A (Tc) | 15V, 20V | 9.1mOhm @ 92.1A, 20V | 5.6V @ 18.7mA | 112 nC @ 18 V | +23V, -7V | 4001 pF @ 400 V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
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