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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    MSCSM120AM08T3AG

    MSCSM120AM08T3AG

    MOSFET 2N-CH 1200V 337A

    Microchip Technology

    4,576
    RFQ
    MSCSM120AM08T3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 160A, 20V 2.8V @ 12mA 928nC @ 20V 12100pF @ 1000V 1.409kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70VR1M07CT6AG

    MSCSM70VR1M07CT6AG

    MOSFET 2N-CH 700V 349A

    Microchip Technology

    4,093
    RFQ
    MSCSM70VR1M07CT6AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120VR1M11CT6AG

    MSCSM120VR1M11CT6AG

    MOSFET 2N-CH 1200V 251A

    Microchip Technology

    4,737
    RFQ
    MSCSM120VR1M11CT6AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9000pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70TAM10TPAG

    MSCSM70TAM10TPAG

    MOSFET 6N-CH 700V 238A

    Microchip Technology

    3,405
    RFQ
    MSCSM70TAM10TPAG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70AM025T6AG

    MSCSM70AM025T6AG

    MOSFET 2N-CH 700V 689A

    Microchip Technology

    3,816
    RFQ
    MSCSM70AM025T6AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70HM05AG

    MSCSM70HM05AG

    MOSFET 4N-CH 700V 349A

    Microchip Technology

    3,866
    RFQ
    MSCSM70HM05AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70AM025D3AG

    MSCSM70AM025D3AG

    MOSFET 2N-CH 700V 689A

    Microchip Technology

    2,881
    RFQ
    MSCSM70AM025D3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120TAM16TPAG

    MSCSM120TAM16TPAG

    MOSFET 6N-CH 1200V 171A

    Microchip Technology

    3,809
    RFQ
    MSCSM120TAM16TPAG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM083AG

    MSCSM120HM083AG

    MOSFET 4N-CH 1200V 251A

    Microchip Technology

    2,401
    RFQ
    MSCSM120HM083AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9000pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70AM025T6LIAG

    MSCSM70AM025T6LIAG

    MOSFET 2N-CH 700V 689A

    Microchip Technology

    4,579
    RFQ
    MSCSM70AM025T6LIAG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70VR1M03CT6AG

    MSCSM70VR1M03CT6AG

    MOSFET 2N-CH 700V 585A

    Microchip Technology

    4,692
    RFQ
    MSCSM70VR1M03CT6AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 585A (Tc) 3.8mOhm @ 200A, 20V 2.4V @ 20mA 1075nC @ 20V 22500pF @ 700V 1.625kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM042D3AG

    MSCSM120AM042D3AG

    MOSFET 2N-CH 1200V 495A

    Microchip Technology

    4,722
    RFQ
    MSCSM120AM042D3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM042T6LIAG

    MSCSM120AM042T6LIAG

    MOSFET 2N-CH 1200V 495A

    Microchip Technology

    4,531
    RFQ
    MSCSM120AM042T6LIAG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70HM038AG

    MSCSM70HM038AG

    MOSFET 4N-CH 700V 464A

    Microchip Technology

    3,490
    RFQ
    MSCSM70HM038AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V 18000pF @ 700V 1.277kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120VR1M062CT6AG

    MSCSM120VR1M062CT6AG

    MOSFET 2N-CH 1200V 420A

    Microchip Technology

    4,859
    RFQ
    MSCSM120VR1M062CT6AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 420A (Tc) 6.2mOhm @ 200A, 20V 2.8V @ 15mA 1160nC @ 20V 15100pF @ 1000V 1.753kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120HM063AG

    MSCSM120HM063AG

    MOSFET 4N-CH 1200V 333A

    Microchip Technology

    2,824
    RFQ
    MSCSM120HM063AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 12mA 928nC @ 20V 12000pF @ 1000V 873W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120VR1M16CTPAG

    MSCSM120VR1M16CTPAG

    MOSFET 6N-CH 1200V 171A

    Microchip Technology

    3,545
    RFQ
    MSCSM120VR1M16CTPAG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    WAS350M12BM3

    WAS350M12BM3

    MOSFET 2N-CH 1200V 417A

    Wolfspeed, Inc.

    4,250
    RFQ
    WAS350M12BM3

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 417A (Tc) 5.2mOhm @ 350A, 15V 3.6V @ 85mA 844nC @ 15V 25700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
    MSCSM120TAM11TPAG

    MSCSM120TAM11TPAG

    MOSFET 6N-CH 1200V 251A

    Microchip Technology

    2,615
    RFQ
    MSCSM120TAM11TPAG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9060pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM027T6AG

    MSCSM120AM027T6AG

    MOSFET 2N-CH 1200V 733A

    Microchip Technology

    4,326
    RFQ
    MSCSM120AM027T6AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V 27000pF @ 1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    Total 5737 Record«Prev1... 147148149150151152153154...287Next»
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