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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    FMM150-0075X2F

    FMM150-0075X2F

    MOSFET 2N-CH 75V 120A I4-PAC

    IXYS

    3,008
    RFQ

    -

    HiPerFET™, TrenchT2™ ISOPLUSi5-PAK™ Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 75V 120A 5.8mOhm @ 100A, 10V 4V @ 250µA 178nC @ 10V 10500pF @ 25V 170W -55°C ~ 175°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    MSCSM120AM50CT1AG

    MSCSM120AM50CT1AG

    MOSFET 2N-CH 1200V 55A SP1F

    Microchip Technology

    2,948
    RFQ
    MSCSM120AM50CT1AG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP1F
    MSCSM70AM10CT3AG

    MSCSM70AM10CT3AG

    MOSFET 2N-CH 700V 241A SP3F

    Microchip Technology

    3,713
    RFQ
    MSCSM70AM10CT3AG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM170AM23CT1AG

    MSCSM170AM23CT1AG

    MOSFET 2N-CH 1700V 124A

    Microchip Technology

    4,724
    RFQ
    MSCSM170AM23CT1AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM170AM11CT3AG

    MSCSM170AM11CT3AG

    MOSFET 2N-CH 1700V 240A

    Microchip Technology

    4,479
    RFQ
    MSCSM170AM11CT3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 240A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1.14kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM170DUM058AG

    MSCSM170DUM058AG

    MOSFET 2N-CH 1700V 353A

    Microchip Technology

    1
    RFQ
    MSCSM170DUM058AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1642W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM170DUM039AG

    MSCSM170DUM039AG

    MOSFET 2N-CH 1700V 523A

    Microchip Technology

    3,224
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V 29700pF @ 1000V 2400W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    CAS300M12BM2

    CAS300M12BM2

    MOSFET 2N-CH 1200V 423A MODULE

    Wolfspeed, Inc.

    1
    RFQ
    CAS300M12BM2

    Tabla de datos

    Z-FET™ Module, Screw Terminals Bulk Not For New Designs Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 423A (Tc) 5.7mOhm @ 300A, 20V 2.3V @ 15mA (Typ) 1025nC @ 20V 19500pF @ 800V 1660W 150°C (TJ) - - Chassis Mount Module
    MSCSM120DUM027AG

    MSCSM120DUM027AG

    MOSFET 2N-CH 1200V 733A

    Microchip Technology

    1
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @ 1000V 2968W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM02CT6LIAG

    MSCSM120AM02CT6LIAG

    MOSFET 2N-CH 1200V 947A SP6C LI

    Microchip Technology

    1
    RFQ
    MSCSM120AM02CT6LIAG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 947A (Tc) 2.6mOhm @ 480A, 20V 2.8V @ 12mA 2784nC @ 20V 36240pF @ 1000V 3.75kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
    CAB760M12HM3R

    CAB760M12HM3R

    MOSFET 2N-CH 1200V 1.015KA MODUL

    Wolfspeed, Inc.

    3,683
    RFQ
    CAB760M12HM3R

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 1.015kA (Tc) 1.73mOhm @ 760A, 15V 3.6V @ 280mA 2724nC @ 15V 79400pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
    SSM6N35FE,LM

    SSM6N35FE,LM

    MOSFET 2N-CH 20V 0.18A ES6

    Toshiba Semiconductor and Storage

    3,743
    RFQ
    SSM6N35FE,LM

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 180mA 3Ohm @ 50mA, 4V 1V @ 1mA - 9.5pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
    PJT7812_R1_00001

    PJT7812_R1_00001

    MOSFET 2N-CH 30V 0.5A SOT363

    Panjit International Inc.

    2,664
    RFQ
    PJT7812_R1_00001

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 500mA (Ta) 1.2Ohm @ 500mA, 4.5V 1.1V @ 250µA 0.87nC @ 4.5V 34pF @ 15V 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    PJX8812_R1_00001

    PJX8812_R1_00001

    MOSFET 2N-CH 30V 0.35A SOT563

    Panjit International Inc.

    3,092
    RFQ

    -

    - SOT-563, SOT-666 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 350mA (Ta) 1.2Ohm @ 350mA, 4.5V 1.1V @ 250µA 0.87nC @ 4.5V 34pF @ 15V 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
    SSM6N62TU,LXHF

    SSM6N62TU,LXHF

    MOSFET 2N-CH 20V 0.8A UF6

    Toshiba Semiconductor and Storage

    2,467
    RFQ
    SSM6N62TU,LXHF

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 20V 800mA (Ta) 85mOhm @ 800mA, 4.5V 1V @ 1mA 2nC @ 4.5V 177pF @ 10V 500mW (Ta) 150°C Automotive AEC-Q101 Surface Mount UF6
    US6M2GTR

    US6M2GTR

    MOSFET N/P-CH 30V/20V 1.5A TUMT6

    Rohm Semiconductor

    4,060
    RFQ
    US6M2GTR

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V, 20V 1.5A, 1A 240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V 1.5V @ 1mA, 2V @ 1mA 2.2nC @ 4.5V, 2.1nC @ 4.5V 80pF @ 10V, 150pF @ 10V 1W 150°C - - Surface Mount TUMT6
    AOD609G

    AOD609G

    MOSFET N/P-CH 40V 12A TO252-4L

    Alpha & Omega Semiconductor Inc.

    4,898
    RFQ
    AOD609G

    Tabla de datos

    - TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 40V 12A (Tc) 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V 3V @ 250µA 13nC @ 10V, 21nC @ 10V 545pF @ 20V, 890pF @ 20V 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252-4L
    SSM6N951L,EFF

    SSM6N951L,EFF

    MOSFET 2N-CH 12V 8A 6TCSPA

    Toshiba Semiconductor and Storage

    4,308
    RFQ
    SSM6N951L,EFF

    Tabla de datos

    - 6-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 12V 8A 5.1mOhm @ 8A, 4.5V - - - - - - - Surface Mount 6-TCSPA (2.14x1.67)
    ZXMN2AMCTA

    ZXMN2AMCTA

    MOSFET 2N-CH 20V 3.7A 8DFN

    Diodes Incorporated

    4
    RFQ
    ZXMN2AMCTA

    Tabla de datos

    - 8-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 3.7A (Ta) 120mOhm @ 4A, 4.5V 3V @ 250µA 3.1nC @ 4.5V 299pF @ 15V 1.7W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN3020B-8
    SIZ200DT-T1-GE3

    SIZ200DT-T1-GE3

    MOSFET 2N-CH 30V 22A 8POWERPAIR

    Vishay Siliconix

    4,846
    RFQ
    SIZ200DT-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V 2.4V @ 250µA 28nC @ 10V, 30nC @ 10V 1510pF @ 15V, 1600pF @ 15V 4.3W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (3.3x3.3)
    Total 5737 Record«Prev1... 143144145146147148149150...287Next»
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