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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    NVMJD012N06CLTWG

    NVMJD012N06CLTWG

    MOSFET 2N-CH 60V 11.5A 8LFPAK

    onsemi

    3,905
    RFQ
    NVMJD012N06CLTWG

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 11.5A (Ta), 42A (Tc) 11.9mOhm @ 25A, 10V 2.2V @ 30µA 11.5nC @ 10V 792pF @ 25V 3.2W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    NVMFD5C470NT1G

    NVMFD5C470NT1G

    MOSFET 2N-CH 40V 11.7A 8DFN

    onsemi

    2,543
    RFQ
    NVMFD5C470NT1G

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 11.7A (Ta), 36A (Tc) 11.7mOhm @ 10A, 10V 3.5V @ 250µA 8nC @ 10V 420pF @ 25V 3.1W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    NVMJD5D4N04CTWG

    NVMJD5D4N04CTWG

    MOSFET N-CH 40V LFPAK56

    onsemi

    2,003
    RFQ
    NVMJD5D4N04CTWG

    Tabla de datos

    - - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
    SP8J5FRATB

    SP8J5FRATB

    MOSFET 2P-CH 7A 8SOP

    Rohm Semiconductor

    3,386
    RFQ
    SP8J5FRATB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 4V Drive - 7A (Ta) 28mOhm @ 7A, 10V 2.5V @ 1mA - - - 150°C Automotive AEC-Q101 Surface Mount 8-SOP
    HP8M31TB1

    HP8M31TB1

    MOSFET N/P-CH 60V 8.5A 8HSOP

    Rohm Semiconductor

    1
    RFQ
    HP8M31TB1

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V 8.5A (Ta) 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V 3V @ 1mA 12.3nC @ 10V, 38nC @ 10V 470pF @ 30V, 2300pF @ 30V 3W (Ta) 150°C (TJ) - - Surface Mount 8-HSOP
    NVMFD5C462NLT1G

    NVMFD5C462NLT1G

    MOSFET 2N-CH 40V 18A 8DFN

    onsemi

    2,921
    RFQ
    NVMFD5C462NLT1G

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 18A (Ta), 84A (Tc) 4.7mOhm @ 10A, 10V 2.2V @ 40µA 11nC @ 4.5V 1300pF @ 25V 3W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    SLA5073

    SLA5073

    MOSFET 6N-CH 60V 5A 15ZIP

    Sanken Electric USA Inc.

    2,448
    RFQ
    SLA5073

    Tabla de datos

    - 15-SIP Exposed Tab, Formed Leads Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) Logic Level Gate 60V 5A 300mOhm @ 3A, 4V 2V @ 250µA - 320pF @ 10V 5W 150°C (TJ) - - Through Hole 15-ZIP
    CSD86356Q5DT

    CSD86356Q5DT

    MOSFET 2N-CH 25V 40A 8VSON-CLIP

    Texas Instruments

    4,477
    RFQ
    CSD86356Q5DT

    Tabla de datos

    NexFET™ 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate, 5V Drive 25V 40A (Ta) 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V 1.85V @ 250µA, 1.5V @ 250µA 7.9nC @ 4.5V, 19.3nC @ 4.5V 1040pF @ 12.5V, 2510pF @ 12.5V 12W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (5x6)
    ALD110908ASAL

    ALD110908ASAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    4,039
    RFQ
    ALD110908ASAL

    Tabla de datos

    EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 810mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD110900ASAL

    ALD110900ASAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    4,763
    RFQ
    ALD110900ASAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD1101SAL

    ALD1101SAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    3,697
    RFQ
    ALD1101SAL

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD114835SCL

    ALD114835SCL

    MOSFET 4N-CH 10.6V 16SOIC

    Advanced Linear Devices Inc.

    2,196
    RFQ
    ALD114835SCL

    Tabla de datos

    EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    SQUN702E-T1_GE3

    SQUN702E-T1_GE3

    MOSFET N/P-CH 40V/200V 30A DIE

    Vishay Siliconix

    3,892
    RFQ
    SQUN702E-T1_GE3

    Tabla de datos

    TrenchFET® Die Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel, Common Drain - 40V, 200V 30A (Tc), 20A (Tc) 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V 2.5V @ 250µA, 3.5V @ 250µA 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V 48W (Tc), 60W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank Die
    ALD212900APAL

    ALD212900APAL

    MOSFET 2N-CH 10.6V 0.08A 8PDIP

    Advanced Linear Devices Inc.

    4,872
    RFQ
    ALD212900APAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA 14Ohm 10mV @ 20µA - 30pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD1102ASAL

    ALD1102ASAL

    MOSFET 2P-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    4,682
    RFQ
    ALD1102ASAL

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD110814SCL

    ALD110814SCL

    MOSFET 4N-CH 10.6V 16SOIC

    Advanced Linear Devices Inc.

    4
    RFQ
    ALD110814SCL

    Tabla de datos

    EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD110900PAL

    ALD110900PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    3,792
    RFQ
    ALD110900PAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD210800ASCL

    ALD210800ASCL

    MOSFET 4N-CH 10.6V 0.08A 16SOIC

    Advanced Linear Devices Inc.

    2,917
    RFQ
    ALD210800ASCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 10mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    MSCSM120AM31T1AG

    MSCSM120AM31T1AG

    MOSFET 2N-CH 1200V 89A

    Microchip Technology

    4,207
    RFQ
    MSCSM120AM31T1AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70VR1M19C1AG

    MSCSM70VR1M19C1AG

    MOSFET 2N-CH 700V 124A

    Microchip Technology

    4,286
    RFQ
    MSCSM70VR1M19C1AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    Total 5737 Record«Prev1... 145146147148149150151152...287Next»
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