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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    IRF7328TRPBF

    IRF7328TRPBF

    MOSFET 2P-CH 30V 8A 8SO

    Infineon Technologies

    3,060
    RFQ
    IRF7328TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 8A 21mOhm @ 8A, 10V 2.5V @ 250µA 78nC @ 10V 2675pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    HT8KB6TB1

    HT8KB6TB1

    MOSFET 2N-CH 40V 8A 8HSMT

    Rohm Semiconductor

    2,178
    RFQ
    HT8KB6TB1

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 8A (Ta), 15A (Tc) 17.2mOhm @ 8A, 10V 2.5V @ 1mA 10.6nC @ 10V 530pF @ 20V 2W (Ta), 14W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
    IQE220N15NM5SCATMA1

    IQE220N15NM5SCATMA1

    MOSFET 2N-CH 150V 8WHSON

    Infineon Technologies

    2,709
    RFQ
    IQE220N15NM5SCATMA1

    Tabla de datos

    OptiMOS™ 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 150V - - - - - - - - - Surface Mount PG-WHSON-8-1
    FAM65CR51ADZ1

    FAM65CR51ADZ1

    MOSFET 2N-CH 650V 41A APMCD-B16

    onsemi

    2,010
    RFQ
    FAM65CR51ADZ1

    Tabla de datos

    - 12-SSIP Exposed Pad, Formed Leads Tube Active Silicon Carbide (SiC) 2 N-Channel - 650V 41A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 189W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCD-B16
    NVXK2TR80WDT

    NVXK2TR80WDT

    MOSFET 4N-CH 1200V 20A APM32

    onsemi

    2,926
    RFQ
    NVXK2TR80WDT

    Tabla de datos

    - 32-PowerDIP Module (1.311", 33.30mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 20A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 82W (Tc) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
    NVXK2VR80WXT2

    NVXK2VR80WXT2

    MOSFET 6N-CH 1200V 31A APM32

    onsemi

    3,601
    RFQ
    NVXK2VR80WXT2

    Tabla de datos

    - 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 31A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
    NVXK2PR80WXT2

    NVXK2PR80WXT2

    MOSFET 4N-CH 1200V 31A APM32

    onsemi

    4,224
    RFQ
    NVXK2PR80WXT2

    Tabla de datos

    - 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 31A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
    M1P45M12W2-1LA

    M1P45M12W2-1LA

    MOSFET 6N-CH 1200V ACEPACK DMT

    STMicroelectronics

    2,318
    RFQ
    M1P45M12W2-1LA

    Tabla de datos

    ECOPACK® 32-PowerDIP Module (1.264", 32.10mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 30A (Tc) 60.5mOhm @ 20A, 18V 5V @ 1mA 100nC @ 18V 2086pF @ 800V - -40°C ~ 175°C (TJ) - - Through Hole ACEPACK DMT-32
    NVXK2VR80WDT2

    NVXK2VR80WDT2

    MOSFET 6N-CH 1200V 20A APM32

    onsemi

    2,919
    RFQ
    NVXK2VR80WDT2

    Tabla de datos

    - 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 20A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 82W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
    M1F80M12W2-1LA

    M1F80M12W2-1LA

    AUTOMOTIVE-GRADE ACEPACK DMT-32

    STMicroelectronics

    2,640
    RFQ
    M1F80M12W2-1LA

    Tabla de datos

    * - Tube Active - - - - - - - - - - - - - - -
    NXH040F120MNF1PG

    NXH040F120MNF1PG

    MOSFET 4N-CH 1200V 30A 22PIM

    onsemi

    2,442
    RFQ
    NXH040F120MNF1PG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
    MSCSM120AM50T1AG

    MSCSM120AM50T1AG

    MOSFET 2N-CH 1200V 55A

    Microchip Technology

    2,291
    RFQ
    MSCSM120AM50T1AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    NXH010P90MNF1PG

    NXH010P90MNF1PG

    MOSFET 2N-CH 900V 154A

    onsemi

    2,132
    RFQ
    NXH010P90MNF1PG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 900V 154A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 328W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
    NXH010P120MNF1PG

    NXH010P120MNF1PG

    MOSFET 2N-CH 1200V 114A

    onsemi

    4,785
    RFQ
    NXH010P120MNF1PG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
    NXH020P120MNF1PG

    NXH020P120MNF1PG

    MOSFET 2N-CH 1200V 51A

    onsemi

    3,529
    RFQ
    NXH020P120MNF1PG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
    NXH006P120M3F2PTHG

    NXH006P120M3F2PTHG

    MOSFET 2N-CH 1200V 191A 36PIM

    onsemi

    1
    RFQ
    NXH006P120M3F2PTHG

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 191A (Tc) 8mOhm @ 100A, 18V 4.4V @ 80mA 622nC @ 20V 11914pF @ 800V 556W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
    A2U8M12W3-FC

    A2U8M12W3-FC

    MOSFET 4N-CH 750V/1.2KV 180A

    STMicroelectronics

    4,289
    RFQ
    A2U8M12W3-FC

    Tabla de datos

    ECOPACK® Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 750V, 1.2kV 180A, 140A 8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V 4.2V @ 2mA, 4V @ 2mA 288nC @ 18V, 304nC @ 18V 7660pF @ 400V, 7370pF @ 800V - -55°C ~ 150°C (TJ) - - Chassis Mount -
    CAB011A12GM3

    CAB011A12GM3

    MOSFET 2N-CH 1200V 141A MODULE

    Wolfspeed, Inc.

    2,859
    RFQ
    CAB011A12GM3

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 141A (Tj) 13.9mOhm @ 150A, 15V 3.9V @ 34mA 354nC @ 15V 11000pF @ 1000V 10mW -40°C ~ 150°C (TJ) - - Chassis Mount Module
    CAB008A12GM3T

    CAB008A12GM3T

    MOSFET 2N-CH 1200V 182A MODULE

    Wolfspeed, Inc.

    1
    RFQ
    CAB008A12GM3T

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 182A (Tj) 10.4mOhm @ 150A, 15V 3.6V @ 46mA 472nC @ 15V 13600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
    BSM300D12P4G101

    BSM300D12P4G101

    MOSFET 2N-CH 1200V 291A MODULE

    Rohm Semiconductor

    2,426
    RFQ
    BSM300D12P4G101

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 291A (Tc) - 4.8V @ 145.6mA - 30000pF @ 10V 925W (Tc) 175°C (TJ) - - Chassis Mount Module
    Total 5737 Record«Prev1... 149150151152153154155156...287Next»
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