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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    WAS530M12BM3

    WAS530M12BM3

    MOSFET 2N-CH 1200V 630A

    Wolfspeed, Inc.

    2,784
    RFQ
    WAS530M12BM3

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 630A (Tc) 3.47mOhm @ 530A, 15V 3.6V @ 127mA 1362nC @ 15V 38900pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
    MSCSM120AM027D3AG

    MSCSM120AM027D3AG

    MOSFET 2N-CH 1200V 733A

    Microchip Technology

    4,943
    RFQ
    MSCSM120AM027D3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 27mA 2088nC @ 20V 27000pF @ 1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM03T6LIAG

    MSCSM120AM03T6LIAG

    MOSFET 2N-CH 1200V 805A

    Microchip Technology

    2,361
    RFQ
    MSCSM120AM03T6LIAG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 805A (Tc) 3.1mOhm @ 400A, 20V 2.8V @ 30mA 2320nC @ 20V 30200pF @ 1000V 3.215kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM02T6LIAG

    MSCSM120AM02T6LIAG

    MOSFET 2N-CH 1200V 947A

    Microchip Technology

    3,978
    RFQ
    MSCSM120AM02T6LIAG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 947A (Tc) 2.6mOhm @ 480A, 20V 2.8V @ 36mA 2784nC @ 20V 36200pF @ 1000V 3.75kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM027CD3AG

    MSCSM120AM027CD3AG

    MOSFET 2N-CH 1200V 733A D3

    Microchip Technology

    1
    RFQ
    MSCSM120AM027CD3AG

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount D3
    CAS380M17HM3

    CAS380M17HM3

    MOSFET 2N-CH 1700V 532A MODULE

    Wolfspeed, Inc.

    1
    RFQ
    CAS380M17HM3

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1700V (1.7kV) 532A (Tc) 3.74mOhm @ 380A, 15V 3.6V @ 152mA 1494nC @ 15V 4700pF @ 1200V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
    SSM6N15AFE,LM

    SSM6N15AFE,LM

    MOSFET 2N-CH 30V 0.1A ES6

    Toshiba Semiconductor and Storage

    10
    RFQ
    SSM6N15AFE,LM

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 100mA 4Ohm @ 10mA, 4V 1.5V @ 100µA - 13.5pF @ 3V 150mW 150°C (TJ) - - Surface Mount ES6
    DMG6301UDW-13

    DMG6301UDW-13

    MOSFET 2N-CH 25V 0.24A SOT363

    Diodes Incorporated

    4,806
    RFQ
    DMG6301UDW-13

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 25V 240mA 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.36nC @ 4.5V 27.9pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    DMN62D0UV-7

    DMN62D0UV-7

    MOSFET 2N-CH 60V 0.49A SOT563

    Diodes Incorporated

    4,095
    RFQ
    DMN62D0UV-7

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 490mA (Ta) 2Ohm @ 100mA, 4.5V 1V @ 250µA 0.5nC @ 4.5V 32pF @ 30V 470mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
    2N7002DWS-7

    2N7002DWS-7

    MOSFET 2N-CH 60V 0.247A SOT363

    Diodes Incorporated

    4,059
    RFQ
    2N7002DWS-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 247mA (Ta) 4Ohm @ 500mA, 10V 2.5V @ 250µA 0.4nC @ 4.5V 41pF @ 25V 290mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    PJS6801_S1_00001

    PJS6801_S1_00001

    MOSFET 2P-CH 30V 3.2A SOT23-6

    Panjit International Inc.

    3,008
    RFQ
    PJS6801_S1_00001

    Tabla de datos

    - SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 3.2A (Ta) 74mOhm @ 3.2A, 10V 1.3V @ 250µA 15nC @ 10V 633pF @ 15V 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
    SQ1902AEL-T1_GE3

    SQ1902AEL-T1_GE3

    MOSFET 2N-CH 20V 0.78A SC70-6

    Vishay Siliconix

    3,866
    RFQ
    SQ1902AEL-T1_GE3

    Tabla de datos

    TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 780mA (Tc) 415mOhm @ 660mA, 4.5V 1.5V @ 250µA 1.2nC @ 4.5V 75pF @ 10V 430mW -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SC-70-6
    SH8KE5TB1

    SH8KE5TB1

    100V 2.5A, DUAL NCH+NCH, SOP8, P

    Rohm Semiconductor

    2,305
    RFQ

    -

    * - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
    SQJ748EP-T1_GE3

    SQJ748EP-T1_GE3

    AUTOMOTIVE DUAL N-CHANNEL 40V (D

    Vishay Siliconix

    3,929
    RFQ
    SQJ748EP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 72A (Tc) 6.88mOhm @ 7A, 10V 3.5V @ 250µA 21nC @ 10V 1230pF @ 25V 66W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8L Dual BWL
    SIA921EDJ-T4-GE3

    SIA921EDJ-T4-GE3

    MOSFET 2P-CH 20V 4.5A PPAK8X8

    Vishay Siliconix

    4,728
    RFQ
    SIA921EDJ-T4-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.5A 59mOhm @ 3.6A, 4.5V 1.4V @ 250µA 23nC @ 10V - 7.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    SQJB44EP-T1_JE3

    SQJB44EP-T1_JE3

    AUTOMOTIVE DUAL N-CHANNEL 40V (D

    Vishay Siliconix

    3,851
    RFQ
    SQJB44EP-T1_JE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 30A (Tc) 5.2mOhm @ 8A, 10V 2.2V @ 250µA 50nC @ 10V 3075pF @ 25V 48W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    HP8KB5TB1

    HP8KB5TB1

    40V 16.5A, DUAL NCH+NCH, HSOP8,

    Rohm Semiconductor

    3,072
    RFQ

    -

    * - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
    HP8KC5TB1

    HP8KC5TB1

    60V 12A, DUAL NCH+NCH, HSOP8, PO

    Rohm Semiconductor

    4,809
    RFQ

    -

    * - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
    ISA220280C03LMDSXTMA1

    ISA220280C03LMDSXTMA1

    ISA220280C03LMDSXTMA1

    Infineon Technologies

    3,827
    RFQ
    ISA220280C03LMDSXTMA1

    Tabla de datos

    OptiMOS™ 3 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc) 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V 2.7V @ 1mA 13.4nC @ 10V 1400pF @ 15V 1.4W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8-920
    SIZF918BDT-T1-GE3

    SIZF918BDT-T1-GE3

    DUAL N-CHANNEL 30 V (D-S) MOSFET

    Vishay Siliconix

    2,708
    RFQ
    SIZF918BDT-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 25A (Ta), 73A (Tc), 41A (Ta), 158A (Tc) 3.3mOhm @ 10A, 10V, 1.4Ohm @ 15A, 10V 2.2V @ 250µA 29nC @ 10V, 77nC @ 10V 1290pF @ 15V, 3350pF @ 15V 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (6x5)
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