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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    MSCSM120HRM052NG

    MSCSM120HRM052NG

    MOSFET 4N-CH 1200V/700V 472A

    Microchip Technology

    4,558
    RFQ
    MSCSM120HRM052NG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 472A (Tc), 442A (Tc) 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V 2.8V @ 18mA, 2.4V @ 16mA 1392nC @ 20V, 860nC @ 20V 18100pF @ 1000V, 18000pF @ 700V 1.846kW (Tc), 1.161kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    FS03MR12A7MA2BHPSA1

    FS03MR12A7MA2BHPSA1

    MOSFET 6N-CH 1200V 310A

    Infineon Technologies

    4,507
    RFQ
    FS03MR12A7MA2BHPSA1

    Tabla de datos

    HybridPACK™ Module Box Active Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 310A 2.54mOhm @ 310A, 18V 4.55V @ 120mA 870nC @ 18V 25900pF @ 750V - -40°C ~ 175°C (TJ) - - Chassis Mount -
    CAB003M09DM3

    CAB003M09DM3

    MOSFET 2N-CH 900V 518A MODULE

    Wolfspeed, Inc.

    1
    RFQ
    CAB003M09DM3

    Tabla de datos

    - Module Bulk Active SiCFET (Silicon Carbide) 2 N-Channel (Half Bridge) - 900V 518A (Tc) 3.25mOhm @ 400A, 15V 3.5V @ 130mA 840nC @ 15V 20.4pF @ 900V 1.163kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount Module
    CAR600M12HN6

    CAR600M12HN6

    MOSFET 2N-CH 1200V 908A MODULE

    Wolfspeed, Inc.

    1
    RFQ
    CAR600M12HN6

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 908A (Tc) - - - 45300pF @ 0V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
    CAR600M17HN6

    CAR600M17HN6

    MOSFET 2N-CH 1700V 986A MODULE

    Wolfspeed, Inc.

    3,861
    RFQ
    CAR600M17HN6

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 986A (Tc) - - - 55700pF @ 0V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
    FF4000UXTR33T2M1BPSA1

    FF4000UXTR33T2M1BPSA1

    XHP HV

    Infineon Technologies

    3,786
    RFQ
    FF4000UXTR33T2M1BPSA1

    Tabla de datos

    XHP™2 Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 3300V (3.3kV) 500A (Tc) 4.8mOhm @ 500A, 15V 5.55V @ 450mA 2500nC @ 15V 101000pF @ 1800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-XHP2K17
    FF2000UXTR33T2M1BPSA1

    FF2000UXTR33T2M1BPSA1

    MOSFET 2N-CH 3300V 9AG-XHP2K33

    Infineon Technologies

    1
    RFQ
    FF2000UXTR33T2M1BPSA1

    Tabla de datos

    CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 3300V (3.3kV) 925A (Tc) 2.4mOhm @ 1kA, 15V 5.55V @ 900mA 5000nC @ 15V 203000pF @ 1.8kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-XHP2K33
    SI6303KDWS-TP

    SI6303KDWS-TP

    MOSFET 2N-CH 30V 0.5A SOT-363S

    Micro Commercial Co

    2,344
    RFQ
    SI6303KDWS-TP

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 500mA (Ta) 500mOhm @ 500mA, 4.5V 1.5V @ 250µA 0.55nC @ 4.5V 34pF @ 25V 300mW (Tj) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363S
    DMN31D5UDR4-7

    DMN31D5UDR4-7

    MOSFET 2N-CH 30V 0.5A 6DFN

    Diodes Incorporated

    4,366
    RFQ

    -

    - 6-XFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 500mA (Ta) 1.5Ohm @ 100mA, 4.5V 900mV @ 250µA 50pC @ 4.5V 22.2pF @ 15V 370mW -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN1010-6 (Type UXC)
    DMN31D5UDR4-7R

    DMN31D5UDR4-7R

    MOSFET 2N-CH 30V 0.5A 6DFN

    Diodes Incorporated

    3,795
    RFQ

    -

    - 6-XFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 500mA (Ta) 1.5Ohm @ 100mA, 4.5V 900mV @ 250µA 50pC @ 4.5V 22.2pF @ 15V 370mW -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN1010-6 (Type UXC)
    2N7002KDW-13P

    2N7002KDW-13P

    MOSFET 2N-CH 60V 0.34A SOT363

    Micro Commercial Co

    3,879
    RFQ

    -

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 340mA (Ta) 3Ohm @ 500mA, 10V 2.5V @ 1mA 880pC @ 10V 16pF @ 10V 300mW (Tj) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    DMN31D5UDW-13

    DMN31D5UDW-13

    MOSFET 2N-CH 30V 0.43A SOT363

    Diodes Incorporated

    3,010
    RFQ
    DMN31D5UDW-13

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 430mA (Ta) 1.5Ohm @ 100mA, 4.5V 900mV @ 250µA 0.3nC @ 4.5V 15.4pF @ 15V 330mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    DMP32D9UDAQ-7B

    DMP32D9UDAQ-7B

    MOSFET 2P-CH 30V 0.22A 6DFN

    Diodes Incorporated

    4,415
    RFQ
    DMP32D9UDAQ-7B

    Tabla de datos

    - 6-SMD, No Lead Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 220mA (Ta) 5Ohm @ 100mA, 4.5V 1V @ 250µA 350nC @ 4.5V 21.8pF @ 15V 360mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X2-DFN0806-6
    DMC31D5UDAQ-7B

    DMC31D5UDAQ-7B

    MOSFET N/P-CH 30V 0.4A 6DFN

    Diodes Incorporated

    2,040
    RFQ
    DMC31D5UDAQ-7B

    Tabla de datos

    - 6-SMD, No Lead Bulk Active MOSFET (Metal Oxide) N and P-Channel Complementary - 30V 400mA (Ta), 220mA (Ta) 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V 1V @ 250µA 0.38nC @ 4.5V, 0.35nC @ 4.5V 22.6pF @ 15V, 21.8pF @ 15V 370mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X2-DFN0806-6
    DMN31D5UDAQ-7B

    DMN31D5UDAQ-7B

    MOSFET 2N-CH 30V 0.4A 6DFN

    Diodes Incorporated

    3,960
    RFQ
    DMN31D5UDAQ-7B

    Tabla de datos

    - 6-SMD, No Lead Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 30V 400mA (Ta) 1.5Ohm @ 100mA, 4.5V 1V @ 250µA 0.38nC @ 4.5V 22.6pF @ 15V 370mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X2-DFN0806-6
    DMP22D5UDA-7B

    DMP22D5UDA-7B

    MOSFET 2P-CH 20V 0.35A 6DFN

    Diodes Incorporated

    2,676
    RFQ
    DMP22D5UDA-7B

    Tabla de datos

    - 6-SMD, No Lead Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 350mA (Ta) 1.9Ohm @ 100mA, 4.5V 1V @ 250µA 0.3nC @ 4.5V 17pF @ 15V - -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN0806-6
    BSS138DWK-13

    BSS138DWK-13

    MOSFET 2N-CH 50V 0.31A SOT363

    Diodes Incorporated

    2,500
    RFQ
    BSS138DWK-13

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 310mA (Ta) 2.6Ohm @ 200mA, 10V 1.5V @ 250µA 0.8nC @ 10V 22pF @ 25V 330mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    DMN61D9UDWQ-13

    DMN61D9UDWQ-13

    MOSFET 2N-CH 60V 0.318A SOT363

    Diodes Incorporated

    2,476
    RFQ
    DMN61D9UDWQ-13

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 318mA (Ta) 2Ohm @ 50mA, 5V 1V @ 250µA 0.6nC @ 4.5V 39pF @ 30V 370mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-363
    DMN3401LV-13

    DMN3401LV-13

    MOSFET 2N-CH 30V 0.8A SOT563

    Diodes Incorporated

    2,880
    RFQ
    DMN3401LV-13

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 800mA (Ta) 400mOhm @ 590mA, 10V 1.6V @ 100µA 1.2nC @ 10V 50pF @ 15V 490mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
    DMP31D7LV-13

    DMP31D7LV-13

    MOSFET 2P-CH 30V 0.62A SOT563

    Diodes Incorporated

    4,973
    RFQ
    DMP31D7LV-13

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel - 30V 620mA (Ta) 900mOhm @ 420mA, 10V 2.6V @ 250µA 0.8nC @ 10V 19pF @ 15V 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
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