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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    IPG20N04S412ATMA1

    IPG20N04S412ATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    3,305
    RFQ
    IPG20N04S412ATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 20A 12.2mOhm @ 17A, 10V 4V @ 15µA 18nC @ 10V 1470pF @ 25V 41W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    IPG20N04S4L11AATMA1

    IPG20N04S4L11AATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    2,990
    RFQ
    IPG20N04S4L11AATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 20A 11.6mOhm @ 17A, 10V 2.2V @ 15µA 26nC @ 10V 1990pF @ 25V 41W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    IAUC45N04S6L063HATMA1

    IAUC45N04S6L063HATMA1

    MOSFET 2N-CH 40V 45A 8TDSON

    Infineon Technologies

    3,033
    RFQ
    IAUC45N04S6L063HATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 40V 45A (Tj) 6.3mOhm @ 22A, 10V 2V @ 9µA 13nC @ 10V 775pF @ 25V 41W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-57
    SIR770DP-T1-GE3

    SIR770DP-T1-GE3

    MOSFET 2N-CH 30V 8A PPAK SO8

    Vishay Siliconix

    4,198
    RFQ
    SIR770DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A 21mOhm @ 8A, 10V 2.8V @ 250µA 21nC @ 10V 900pF @ 15V 17.8W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SQJ844AEP-T1_BE3

    SQJ844AEP-T1_BE3

    MOSFET 2N-CH 30V 8A PPAK SO8

    Vishay Siliconix

    3,890
    RFQ
    SQJ844AEP-T1_BE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 8A (Tc) 16.6mOhm @ 7.6A, 10V 2.5V @ 250µA 26nC @ 10V 1161pF @ 15V 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    TQM300NB06DCR RLG

    TQM300NB06DCR RLG

    MOSFET 2N-CH 60V 6A 8PDFNU

    Taiwan Semiconductor Corporation

    4,854
    RFQ
    TQM300NB06DCR RLG

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 6A (Ta), 25A (Tc) 30mOhm @ 6A, 10V 3.8V @ 250µA 20nC @ 10V 1020pF @ 30V 2.5W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 8-PDFNU (5x6)
    SIZ240DT-T1-GE3

    SIZ240DT-T1-GE3

    MOSFET 2N-CH 40V 17.2A 8PWRPAIR

    Vishay Siliconix

    4,601
    RFQ
    SIZ240DT-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc) 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V 2.4V @ 250µA 23nC @ 10V, 22nC @ 10V 1180pF @ 20V, 1070pF @ 20V 4.3W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (3.3x3.3)
    SQJ208EP-T1_GE3

    SQJ208EP-T1_GE3

    MOSFET 2N-CH 40V 20A PPAK SO8

    Vishay Siliconix

    3,442
    RFQ
    SQJ208EP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 20A (Tc), 60A (Tc) 9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V 2.3V @ 250µA, 2.4V @ 250µA 33nC @ 10V, 75nC @ 10V 1700pF @ 25V, 3900pF @ 25V 27W (Tc), 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual Asymmetric
    NVMJD025N04CTWG

    NVMJD025N04CTWG

    MOSFET N-CH 40V LFPAK56

    onsemi

    4,410
    RFQ
    NVMJD025N04CTWG

    Tabla de datos

    - - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
    DMN3012LEG-7

    DMN3012LEG-7

    MOSFET 2N-CH 30V 10A PWRDI3333

    Diodes Incorporated

    3,722
    RFQ
    DMN3012LEG-7

    Tabla de datos

    - 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 10A (Ta), 20A (Tc) 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V 2.1V @ 250µA, 1.15V @ 250µA 6.1nC @ 4.5V, 12.6nC @ 4.5V 850pF @ 15V, 1480pF @ 15V 2.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type D)
    SISF02DN-T1-GE3

    SISF02DN-T1-GE3

    MOSFET 2N-CH 25V 30.5A/60A PPAK

    Vishay Siliconix

    13
    RFQ
    SISF02DN-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV PowerPAK® 1212-8SCD Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 25V 30.5A (Ta), 60A (Tc) 3.5mOhm @ 7A, 10V 2.3V @ 250µA 56nC @ 10V 2650pF @ 10V 5.2W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SCD
    BUK7K17-80EX

    BUK7K17-80EX

    MOSFET 2N-CH 80V 21A LFPAK56D

    Nexperia USA Inc.

    3,378
    RFQ
    BUK7K17-80EX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 21A (Ta) - 4V @ 1mA - - 64W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
    SIZF360DT-T1-GE3

    SIZF360DT-T1-GE3

    MOSFET 2N-CH 30V 23A 6POWERPAIR

    Vishay Siliconix

    3,726
    RFQ
    SIZF360DT-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV 6-PowerPair™ Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual), Schottky - 30V 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) 4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V 2.2V @ 250µA 22nC @ 10V, 62nC @ 10V 1100pF @ 15V, 3150pF @ 15V 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-PowerPair™
    NVMJD027N06CLTWG

    NVMJD027N06CLTWG

    MOSFET 2N-CH 60V 7.7A 8LFPAK

    onsemi

    3,494
    RFQ
    NVMJD027N06CLTWG

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active - 2 N-Channel (Dual) - 60V 7.7A (Ta), 21A (Tc) 27mOhm @ 9A, 10V 2.2V @ 13µA 5nC @ 10V 335pF @ 30V 3.2W (Ta), 24W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    SIZF906ADT-T1-GE3

    SIZF906ADT-T1-GE3

    MOSFET 2N-CH 30V 27A 8POWERPAIR

    Vishay Siliconix

    4,292
    RFQ
    SIZF906ADT-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual), Schottky - 30V 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V 2.2V @ 250µA 49nC @ 10V, 200nC @ 10V 2000pF @ 15V, 8200pF @ 15V 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (6x5)
    IPG20N04S4L07AATMA1

    IPG20N04S4L07AATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    2,978
    RFQ
    IPG20N04S4L07AATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 20A 7.2mOhm @ 17A, 10V 2.2V @ 30µA 50nC @ 10V 3980pF @ 25V 65W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    SISF20DN-T1-GE3

    SISF20DN-T1-GE3

    MOSFET 2N-CH 60V 14A PWRPAK1212

    Vishay Siliconix

    3,016
    RFQ
    SISF20DN-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV PowerPAK® 1212-8SCD Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 14A (Ta), 52A (Tc) 13mOhm @ 7A, 10V 3V @ 250µA 33nC @ 10V 1290pF @ 30V 5.2W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SCD Dual
    SI7949DP-T1-GE3

    SI7949DP-T1-GE3

    MOSFET 2P-CH 60V 3.2A PPAK SO8

    Vishay Siliconix

    4,148
    RFQ
    SI7949DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 60V 3.2A 64mOhm @ 5A, 10V 3V @ 250µA 40nC @ 10V - 1.5W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    NVMJD015N06CLTWG

    NVMJD015N06CLTWG

    MOSFET 2N-CH 60V 10.1A 8LFPAK

    onsemi

    3,687
    RFQ
    NVMJD015N06CLTWG

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active - 2 N-Channel (Dual) - 60V 10.1A (Ta), 35A (Tc) 14.4mOhm @ 17A, 10V 2.2V @ 25µA 9.4nC @ 10V 643pF @ 30V 3.1W (Ta), 37W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    NVMJD7D4N04CLTWG

    NVMJD7D4N04CLTWG

    MOSFET N-CH 40V LFPAK56

    onsemi

    3,993
    RFQ
    NVMJD7D4N04CLTWG

    Tabla de datos

    - - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
    Total 5737 Record«Prev1... 144145146147148149150151...287Next»
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