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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    MSCSM70TAM19CT3AG

    MSCSM70TAM19CT3AG

    MOSFET 6N-CH 700V 124A SP3F

    Microchip Technology

    1
    RFQ
    MSCSM70TAM19CT3AG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM70DUM017AG

    MSCSM70DUM017AG

    MOSFET 2N-CH 700V 1021A

    Microchip Technology

    2,884
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 1021A (Tc) 2.1mOhm @ 360A, 20V 2.4V @ 36mA 1935nC @ 20V 40500pF @ 700V 2750W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    BSM600D12P4G103

    BSM600D12P4G103

    MOSFET 2N-CH 1200V 567A MODULE

    Rohm Semiconductor

    3,471
    RFQ
    BSM600D12P4G103

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 567A (Tc) - 4.8V @ 291.2mA - 59000pF @ 10V 1.78kW (Tc) 175°C (TJ) - - Chassis Mount Module
    MSCSM170AM058CT6LIAG

    MSCSM170AM058CT6LIAG

    MOSFET 2N-CH 1700V 353A

    Microchip Technology

    3,701
    RFQ
    MSCSM170AM058CT6LIAG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1.642kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    CAB650M17HM3

    CAB650M17HM3

    MOSFET 2N-CH 1700V 916A MODULE

    Wolfspeed, Inc.

    1
    RFQ
    CAB650M17HM3

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1700V (1.7kV) 916A (Tc) 1.86mOhm @ 650A, 15V 3.6V @ 305mA 2988nC @ 15V 97300pF @ 1200V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
    FF2600UXTR33T2M1BPSA1

    FF2600UXTR33T2M1BPSA1

    MOSFET 2N-CH 3300V AG-XHP2K33

    Infineon Technologies

    3,093
    RFQ
    FF2600UXTR33T2M1BPSA1

    Tabla de datos

    CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 3300V (3.3kV) 720A (Tc) 3.1mOhm @ 750A, 15V 5.55V @ 675mA 3750nC @ 15V 152000pF @ 1.8kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-XHP2K33
    SSM6N68NU,LF

    SSM6N68NU,LF

    MOSFET 2N-CH 30V 4A 6DFN

    Toshiba Semiconductor and Storage

    16
    RFQ
    SSM6N68NU,LF

    Tabla de datos

    - 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 30V 4A (Ta) 84mOhm @ 2A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 129pF @ 15V 2W (Ta) 150°C - - Surface Mount 6-µDFN (2x2)
    DMN2016LFG-7

    DMN2016LFG-7

    MOSFET 2N-CH 20V 5.2A 8DFN

    Diodes Incorporated

    2,360
    RFQ
    DMN2016LFG-7

    Tabla de datos

    - 8-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 5.2A 18mOhm @ 6A, 4.5V 1.1V @ 250µA 16nC @ 4.5V 1472pF @ 10V 770mW -55°C ~ 150°C (TJ) - - Surface Mount U-DFN3030-8
    ZXMN3A06DN8TA

    ZXMN3A06DN8TA

    MOSFET 2N-CH 30V 4.9A 8SO

    Diodes Incorporated

    13
    RFQ
    ZXMN3A06DN8TA

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.9A 35mOhm @ 9A, 10V 1V @ 250µA (Min) 17.5nC @ 10V 796pF @ 25V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    BUK9V13-40HX

    BUK9V13-40HX

    MOSFET 2N-CH 40V 42A LFPAK56D

    Nexperia USA Inc.

    6
    RFQ
    BUK9V13-40HX

    Tabla de datos

    TrenchMOS™ SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 40V 42A (Ta) 13.6mOhm @ 10A, 10V 2.2V @ 1mA 19.4nC @ 10V 1160pF @ 25V 46W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
    STS1DNC45

    STS1DNC45

    MOSFET 2N-CH 450V 0.4A 8SOIC

    STMicroelectronics

    3,523
    RFQ
    STS1DNC45

    Tabla de datos

    SuperMESH™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 450V 400mA 4.5Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 160pF @ 25V 1.6W 150°C (TJ) - - Surface Mount 8-SOIC
    ALD110900SAL

    ALD110900SAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    2,536
    RFQ
    ALD110900SAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD1116PAL

    ALD1116PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    3,109
    RFQ
    ALD1116PAL

    Tabla de datos

    - 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD1117PAL

    ALD1117PAL

    MOSFET 2P-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    2,938
    RFQ
    ALD1117PAL

    Tabla de datos

    - 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 1800Ohm @ 5V 1.2V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD1102SAL

    ALD1102SAL

    MOSFET 2P-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    12
    RFQ
    ALD1102SAL

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD210800SCL

    ALD210800SCL

    MOSFET 4N-CH 10.6V 0.08A 16SOIC

    Advanced Linear Devices Inc.

    19
    RFQ
    ALD210800SCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 20mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD1102PAL

    ALD1102PAL

    MOSFET 2P-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    22
    RFQ
    ALD1102PAL

    Tabla de datos

    - 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD110800ASCL

    ALD110800ASCL

    MOSFET 4N-CH 10.6V 16SOIC

    Advanced Linear Devices Inc.

    23
    RFQ
    ALD110800ASCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD1101ASAL

    ALD1101ASAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    3,365
    RFQ
    ALD1101ASAL

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD110800APCL

    ALD110800APCL

    MOSFET 4N-CH 10.6V 16PDIP

    Advanced Linear Devices Inc.

    4
    RFQ
    ALD110800APCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
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