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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    WAB300M12BM3

    WAB300M12BM3

    MOSFET 2N-CH 1200V 382A MODULE

    Wolfspeed, Inc.

    3,826
    RFQ
    WAB300M12BM3

    Tabla de datos

    - Module Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 382A (Tc) 5.2mOhm @ 300A, 15V 3.6V @ 92mA 908nC @ 15V 24500pF @ 1000V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
    MSCSM70AM025CD3AG

    MSCSM70AM025CD3AG

    SIC 700V 538A D3

    Microchip Technology

    4
    RFQ
    MSCSM70AM025CD3AG

    Tabla de datos

    - Module Box Active Silicon Carbide (SiC) - - 700V 538A (Tc) - - - - - - - - Chassis Mount D3
    MSQ30C01D

    MSQ30C01D

    MOSFET 30V 5.3A 8SOIC

    Bruckewell

    930
    RFQ
    MSQ30C01D

    Tabla de datos

    Trench 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active - - - 30V 5.3A (Ta), 7A (Ta) 28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V 2.5V @ 250µA - - - -55°C ~ 150°C (Tc) - - Surface Mount 8-SOIC
    QH8JC5TCR

    QH8JC5TCR

    MOSFET 2P-CH 60V 3.5A TSMT8

    Rohm Semiconductor

    4,002
    RFQ
    QH8JC5TCR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 60V 3.5A (Ta) 91mOhm @ 3.5A, 10V 2.5V @ 1mA 17.3nC @ 10V 850pF @ 30V 1.1W (Ta) 150°C (TJ) - - Surface Mount TSMT8
    SI7212DN-T1-GE3

    SI7212DN-T1-GE3

    MOSFET 2N-CH 30V 4.9A PPAK 1212

    Vishay Siliconix

    4
    RFQ
    SI7212DN-T1-GE3

    Tabla de datos

    - PowerPAK® 1212-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.9A 36mOhm @ 6.8A, 10V 1.6V @ 250µA 11nC @ 4.5V - 1.3W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
    DMGD7N45SSD-13

    DMGD7N45SSD-13

    MOSFET 2N-CH 450V 0.5A 8SO

    Diodes Incorporated

    7
    RFQ
    DMGD7N45SSD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 450V 500mA (Ta) 4Ohm @ 400mA, 10V 4.5V @ 1mA 6.9nC @ 10V 256pF @ 25V 1.64W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SO
    ZXMC6A09DN8TA

    ZXMC6A09DN8TA

    MOSFET N/P-CH 60V 3.9A/3.7A 8SO

    Diodes Incorporated

    7
    RFQ
    ZXMC6A09DN8TA

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V 3.9A, 3.7A 45mOhm @ 8.2A, 10V 1V @ 250µA (Min) 24.2nC @ 10V 1407pF @ 40V, 1580pF @ 40V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    ALD1116SAL

    ALD1116SAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    3,533
    RFQ
    ALD1116SAL

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    M1F45M12W2-1LA

    M1F45M12W2-1LA

    MOSFET 4N-CH 1200V ACEPACK DMT

    STMicroelectronics

    3,659
    RFQ
    M1F45M12W2-1LA

    Tabla de datos

    ECOPACK® 32-PowerDIP Module (1.264", 32.10mm) Tube Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 30A (Tc) 64mOhm @ 20A, 18V 5V @ 1mA 100nC @ 18V 2086pF @ 800V - -40°C ~ 175°C (TJ) - - Through Hole ACEPACK DMT-32
    FF4MR12W2M1HB11BPSA1

    FF4MR12W2M1HB11BPSA1

    MOSFET 2N-CH 1200V 170A MODULE

    Infineon Technologies

    2,695
    RFQ
    FF4MR12W2M1HB11BPSA1

    Tabla de datos

    CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 170A (Tj) 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V 17600pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
    FS02MR12A8MA2BBPSA1

    FS02MR12A8MA2BBPSA1

    MOSFET 6N-CH 1200V 390A

    Infineon Technologies

    3,500
    RFQ

    -

    HybridPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 390A (Tj) 1.9mOhm @ 390A, 18V 4.55V @ 160mA 1.19µC @ 18V 34500pF @ 750V - -40°C ~ 175°C (TJ) - - Chassis Mount -
    2N7002KDW-AU_R1_000A1

    2N7002KDW-AU_R1_000A1

    MOSFET 2N-CH 60V 0.25A SOT363

    Panjit International Inc.

    4,416
    RFQ
    2N7002KDW-AU_R1_000A1

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 250mA (Ta) 3Ohm @ 500mA, 10V 2.5V @ 250µA 0.8nC @ 5V 35pF @ 25V 350mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-363
    SSM6N7002BFE,LM

    SSM6N7002BFE,LM

    MOSFET 2N-CH 60V 0.2A ES6

    Toshiba Semiconductor and Storage

    3,578
    RFQ
    SSM6N7002BFE,LM

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 200mA 2.1Ohm @ 500mA, 10V 3.1V @ 250µA - 17pF @ 25V 150mW 150°C (TJ) - - Surface Mount ES6
    SIL2300A-TP

    SIL2300A-TP

    MOSFET 2N-CH 20V 7A SOT23-6L

    Micro Commercial Co

    2,641
    RFQ
    SIL2300A-TP

    Tabla de datos

    - SOT-23-6 Tape & Reel (TR) Active - 2 N-Channel (Dual) Common Drain - 20V 7A 18mOhm @ 5A, 4.5V 1V @ 250µA 9.2nC @ 4.5V 900pF @ 10V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    SSM6P69NU,LF

    SSM6P69NU,LF

    MOSFET 2P-CH 20V 4A 6DFN

    Toshiba Semiconductor and Storage

    2
    RFQ
    SSM6P69NU,LF

    Tabla de datos

    - 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 1.8V Drive 20V 4A (Ta) 45mOhm @ 3.5A, 10V 1.2V @ 1mA 6.74nC @ 4.5V 480pF @ 10V 1W (Ta) 150°C - - Surface Mount 6-µDFN (2x2)
    BSS8402DWQ-7

    BSS8402DWQ-7

    MOSFET N/P-CH 60V/50V SOT363

    Diodes Incorporated

    3,474
    RFQ
    BSS8402DWQ-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V, 50V 115mA, 130mA 13.5Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V, 45pF @ 25V 200mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    DMC4029SK4-13

    DMC4029SK4-13

    MOSFET N/P-CH 40V 8.3A TO252-4L

    Diodes Incorporated

    4,445
    RFQ
    DMC4029SK4-13

    Tabla de datos

    - TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 40V 8.3A 24mOhm @ 6A, 10V 3V @ 250µA 19.1nC @ 20V 1060pF @ 20V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount TO-252-4L
    UT6ME5TCR

    UT6ME5TCR

    MOSFET N/P-CH 100V 2A HUML2020L8

    Rohm Semiconductor

    3,803
    RFQ
    UT6ME5TCR

    Tabla de datos

    - 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 100V 2A (Ta), 1A (Ta) 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V 2.5V @ 1mA 2.8nC @ 10V, 6.7nC @ 10V 90pF @ 50V 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
    IRLHS6276TRPBF

    IRLHS6276TRPBF

    MOSFET 2N-CH 20V 4.5A PQFN

    Infineon Technologies

    3,678
    RFQ
    IRLHS6276TRPBF

    Tabla de datos

    HEXFET® 6-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4.5A 45mOhm @ 3.4A, 4.5V 1.1V @ 10µA 3.1nC @ 4.5V 310pF @ 10V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount 6-PQFN Dual (2x2)
    TSM250NB06DCR RLG

    TSM250NB06DCR RLG

    MOSFET 2N-CH 60V 7A 8PDFN

    Taiwan Semiconductor Corporation

    4,984
    RFQ
    TSM250NB06DCR RLG

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 7A (Ta), 30A (Tc) 25mOhm @ 7A, 10V 4V @ 250µA 22nC @ 10V 1461pF @ 30V 2W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
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