Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Configuración | Característica FET | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Capacitancia de entrada (Ciss) (máx.) a Vds | Potencia: máx. | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FF4MR20KM1HPHPSA1MOSFET 2N-CH 2000V AG-62MMHB Infineon Technologies |
10 |
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C, CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 2000V (2kV) | 280A (Tc) | 5.3mOhm @ 300A, 18V | 5.15V @ 168mA | 1170nC @ 18V | 36100pF @ 1.2kV | - | -40°C ~ 175°C | - | - | Chassis Mount | AG-62MMHB |
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FF1MR12KM1HHPSA1MOSFET Infineon Technologies |
12 |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF1MR12KM1HPHPSA1MOSFET Infineon Technologies |
16 |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPB13N03LBGMOSFET N-CH Infineon Technologies |
999 |
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- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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DF23MR12W1M1B11BPSA1MOSFET 2N-CH 1200V AG-EASY1BM-2 Infineon Technologies |
12 |
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CoolSiC™+ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-EASY1BM-2 |
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F423MR12W1M1PB11BPSA1MOSFET 4N-CH 1200V 50A AG-EASY1B Infineon Technologies |
3 |
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EasyPACK™ | Module | Tray | Obsolete | MOSFET (Metal Oxide) | 4 N-Channel | - | 1200V (1.2kV) | 50A | 22.5mOhm @ 50A, 15V | 5.5V @ 20mA | 124nC @ 15V | 3.68nF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-EASY1B-2 |
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F411MR12W2M1B76BOMA1MOSFET 4N-CH 1200V AG-EASY1B Infineon Technologies |
0 |
|
- |
EasyPACK™ CoolSiC™ | Module | Bulk | Obsolete | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 100A (Tj) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7360pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-EASY1B-2 |
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FF2MR12KM1HOSA1MOSFET 2N-CH 1200V 500A AG-62MM Infineon Technologies |
13 |
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CoolSiC™ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 500A (Tc) | 2.13mOhm @ 500A, 15V | 5.15V @ 224mA | 1340nC @ 15V | 39700pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-62MM |
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FF4MR12W2M1HB11BPSA1MOSFET 2N-CH 1200V 170A MODULE Infineon Technologies |
0 |
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 170A (Tj) | 4mOhm @ 200A, 18V | 5.15V @ 80mA | 594nC @ 18V | 17600pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
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FS02MR12A8MA2BBPSA1MOSFET 6N-CH 1200V 390A Infineon Technologies |
0 |
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- |
HybridPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 390A (Tj) | 1.9mOhm @ 390A, 18V | 4.55V @ 160mA | 1.19µC @ 18V | 34500pF @ 750V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |