Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Configuración | Característica FET | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Capacitancia de entrada (Ciss) (máx.) a Vds | Potencia: máx. | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FF33MR12W1M1HB11BPSA1MOSFET Infineon Technologies |
23 |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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DF14MR12W1M1HFB67BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
24 |
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
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FF11MR12W2M1HPB11BPSA1MOSFET 1200V Infineon Technologies |
18 |
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CoolSiC™ | - | Tray | Active | - | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | - | - |
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FF17MR12W1M1HPB11BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
24 |
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
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DF8MR12W1M1HFB67BPSA1MOSFET 2N-CH 1200V 45A AG-EASY1B Infineon Technologies |
22 |
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EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 45A | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149nC @ 18V | 4400pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY1B |
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FF17MR12W1M1HB70BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
13 |
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
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FF17MR12W1M1HB17BPSA1MOSFET 2N-CH 1200V 50A AG-EASY1B Infineon Technologies |
24 |
|
- |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A (Tj) | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149nC @ 18V | 4400pF @ 800V | 20mW | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY1B |
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FF8MR12W1M1HB70BPSA1MOSFET Infineon Technologies |
20 |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF7MR12W1M1HB17BPSA1MOSFET 2N-CH 1200V AG-EASY1B Infineon Technologies |
24 |
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- |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 105A (Tj) | 5.8mOhm @ 120A, 18V | 5.15V @ 56mA | 400nC @ 18V | 12100pF @ 800V | 20mW | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY1B |
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FF6MR12W2M1HPB11BPSA1MOSFET 2N-CH 1200V 200A MODULE Infineon Technologies |
18 |
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HEXFET® | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 80mA | 496nC @ 15V | 14700pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |