Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Configuración | Característica FET | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Capacitancia de entrada (Ciss) (máx.) a Vds | Potencia: máx. | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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FF6MR12W2M1HB11BPSA1MOSFET 2N-CH 1200V 145A MODULE Infineon Technologies |
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 145A (Tj) | 5.4mOhm @ 150A, 18V | 5.15V @ 60mA | 446nC @ 18V | 13200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
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FS13MR12W2M1HPB11BPSA1MOSFET Infineon Technologies |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF4MR12W2M1HPB11BPSA1MOSFET 2N-CH 1200V AG-EASY2B Infineon Technologies |
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- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 170A | 4mOhm @ 200A, 18V | 5.15V @ 80mA | 594nC @ 18V | 17600pF @ 800V | 20mW | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY2B |
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F411MR12W2M1HPB76BPSA1MOSFET Infineon Technologies |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF6MR12KM1HPHPSA1MOSFET Infineon Technologies |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF6MR20W2M1HB70BPSA1FF6MR20W2M1HB70BPSA1 Infineon Technologies |
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EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 2000V (2kV) | 160A (Tj) | 8.1mOhm @ 160A, 18V | 5.15V @ 112mA | 780nC @ 3V | 24100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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F3L6MR20W2M1HB70BPSA1F3L6MR20W2M1HB70BPSA1 Infineon Technologies |
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EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | Silicon Carbide (SiC) | 2000V (2kV) | 155A (Tj) | 8.7mOhm @ 100A, 18V | 5.15V @ 112mA | 297nC @ 18V | 24100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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FF3MR12KM1HHPSA1MOSFET 2N-CH 1200V 190A AG62MMHB Infineon Technologies |
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CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 190A (Tc) | 4.44mOhm @ 280A, 18V | 5.1V @ 112mA | 800nC @ 18V | 24200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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FF3MR12KM1HPHPSA1MOSFET 2N-CH 1200V 220A AG62MMHB Infineon Technologies |
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CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 220A | 4.44mOhm @ 280A, 18V | 5.1V @ 112mA | 800nC @ 18V | 24200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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FF5MR20KM1HHPSA1MOSFET Infineon Technologies |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |