Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SDS120J015H3-ISATHDIODE 1200V-15A TO247-2L |
150 |
|
![]() Tabla de datos |
Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 51A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 45 µA @ 1200 V | 1182pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
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E6D20065ADIODE SIC 650V TO220 |
990 |
|
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E | TO-220-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 68A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 1277pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
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VS-3C15EP12L-M315A 1200V SIC ZERO QRR SINGLE TJ |
500 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 1200 V | 56pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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PSC1665LQSIC DIODES AND FETS |
450 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.8 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 475pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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E6D16065GDIODE SIC 650V 51A TO263 |
966 |
|
![]() Tabla de datos |
E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1017pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
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E6D16065D1WOLFSPEED SIC, SCHOTTKY DIODE |
440 |
|
![]() Tabla de datos |
E | TO-247-3 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1017pF @ 0V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
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E6D16065ASIC, SCHOTTKY DIODE |
984 |
|
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E | TO-220-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 54A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1026pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
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SCS320AMC7GDIODE SIL CARB 650V 20A TO220FM |
1,000 |
|
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- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 1000pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
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E6D20065HDIODE SIC 650V TO247 |
450 |
|
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E | TO-247-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 59A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 1277pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
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SDS120J015C3-ISATHDIODE 1200V-15A TO220-2L |
150 |
|
![]() Tabla de datos |
Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 51A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 45 µA @ 1200 V | 1182pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
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S3D40065D1DIODE SCHOTTKY SILICON CARBIDE S |
297 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 128A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 3100pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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PCDP15120GB_T0_00601SIC DIODE 1200V/15A IN TO-220AC |
2,000 |
|
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- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PCDP1265GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.6 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 529pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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C4D08120E-TRDIODE SIL CARB 1.2KV 24.5A TO252 |
2,433 |
|
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Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 24.5A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 560pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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C6D16065H53A, 650V SILICON CARBIDE SCHOTT |
200 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 53A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | - | 25 µA @ 650 V | 1017pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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SCS320AGC16DIODE SIL CARB 650V 20A TO220ACP |
1,000 |
|
- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 1000pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
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SDS120J027H3-ISATHDIODE 1200V-27A TO247-2L |
150 |
|
![]() Tabla de datos |
Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 77A | 1.8 V @ 27 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | 1761pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
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SCS220ANHRTRL650V, 20A, SMD, SILICON-CARBIDE |
1,000 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | LPDS | 175°C |
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SCS210KNHRTRL1200V, 10A, SMD, SILICON-CARBIDE |
994 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 530pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | LPDS | 175°C |
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JANTX1N5809USDIODE GEN PURP 100V 3A B SQ-MELF |
108 |
|
![]() Tabla de datos |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |