Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-3C10ET12T-M310A 1200V SIC ZERO QRR SINGLE TJ |
915 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | - | 60 µA @ 1200 V | 38pF @ 800V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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SDS120J010H3-ISATHDIODE 1200V-10A TO247-2L |
200 |
|
![]() Tabla de datos |
Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 36A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
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SCS215ANHRTRL650V 15A SMD SILICON CARBIDE |
500 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263L | 175°C |
|
JANTX1N914URDIODE GEN PURP 75V 200MA DO213AA |
233 |
|
![]() Tabla de datos |
- | DO-213AA | Bulk | Active | Standard | 75 V | 200mA | 1.2 V @ 50 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Military | MIL-PRF-19500/116 | Surface Mount | DO-213AA | -65°C ~ 175°C |
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TSCDT16065G1DIODE SCHOTTKY 650V 16A TO220AC |
994 |
|
- |
- | TO-220-2 | Tube | Active | Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 650 V | 70pF @ 400V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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IDWD140E120D7XKSA1DIODE GEN PURP 1200V 207A TO247 |
167 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 207A | 3 V @ 140 A | Fast Recovery =< 500ns, > 5A (Io) | 225 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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TSCDF16065G1DIODE SCHOTTKY 650V 16A ITO220AC |
1,000 |
|
- |
- | TO-220-2 Full Pack | Tube | Active | Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 650 V | 70pF @ 400V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
1N3070-1DIODE GEN PURP 175V 100MA DO7 |
257 |
|
![]() Tabla de datos |
- | DO-204AA, DO-7, Axial | Bulk | Active | Standard | 175 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | - | - | - | - | Through Hole | DO-7 | -65°C ~ 175°C |
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SDS065J020H3-ISATHDIODE 650V-20A TO247-2L |
190 |
|
![]() Tabla de datos |
Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1018pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
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1N3070UR-1/TRSIGNAL OR COMPUTER DIODE |
135 |
|
![]() Tabla de datos |
- | DO-213AA | Tape & Reel (TR) | Active | Standard | 175 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 175 V | - | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
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PCDF1065G1_T0_00601650V/10A THROUGH HOLE SILICON CA |
2,000 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
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VS-3C15ET12T-M315A 1200V SIC ZERO QRR SINGLE TJ |
1,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 1200 V | 56pF @ 800V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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SCS212AJTLLDIODE SIL CARB 650V 12A TO263AB |
960 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | - | - | - | Surface Mount | TO-263AB | 175°C (Max) |
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PCDP1065GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
1,975 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 446pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-1N1183ADIODE GEN PURP 50V 40A DO203AB |
204 |
|
![]() Tabla de datos |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 50 V | 40A | 1.3 V @ 126 A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5 mA @ 50 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 200°C |
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TSCDF20065G1DIODE SCHOTTKY 650V 20A ITO220AC |
992 |
|
- |
- | TO-220-2 Full Pack | Tube | Active | Schottky | 650 V | 20A | 1.45 V @ 20 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 650 V | 92.7pF @ 400V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
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TSCDT20065G1DIODE SCHOTTKY 650V 20A TO220AC |
967 |
|
- |
- | TO-220-2 | Tube | Active | Schottky | 650 V | 20A | 1.45 V @ 20 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 650 V | 92.7pF @ 400V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-3C10ET12S2L-M310A 1200V SIC ZERO QRR SINGLE TJ |
800 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | - | 60 µA @ 1200 V | 38pF @ 800V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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S5D10170H2DIODE SCHOTTKY SILICON CARBIDE S |
294 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 44A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 978pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
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PCDP1265GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.8 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 372pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |