Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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E6D16065HDIODE SIC 650V TO247 |
444 |
|
![]() Tabla de datos |
E | TO-247-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1017pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
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S3D50065FDIODE SCHOTTKY SILICON CARBIDE S |
294 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 680 V | 112A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 680 V | 3120pF @ 0V, 100MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
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PCDP1665GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.8 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 446pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-3C15ET12S2L-M315A 1200V SIC ZERO QRR SINGLE TJ |
800 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 1200 V | 56pF @ 800V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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VS-3C20ET12T-M320A 1200V SIC ZERO QRR SINGLE TJ |
1,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 110 µA @ 1200 V | 73pF @ 800V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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S4D40120FDIODE SCHOTTKY SILICON CARBIDE S |
500 |
|
- |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | - | - | - | - | - | - | - | - | - | - | Through Hole | ITO-220AC | - |
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S4D30120F1200V, 30A, ITO-220AC, SIC SCHOT |
250 |
|
![]() Tabla de datos |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SDS120J020H3-ISATHDIODE 1200V-20A TO247-2L |
297 |
|
![]() Tabla de datos |
Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 63A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 1565pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
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VS-3C20EP12L-M320A 1200V SIC ZERO QRR SINGLE TJ |
500 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 110 µA @ 1200 V | 73pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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VS-3C20CP12L-M320A 1200V SIC ZERO QRR DUAL TJMA |
500 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 60 µA @ 1200 V | 38pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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1N5418USDIODE GEN PURP 400V 3A D-5B |
102 |
|
![]() Tabla de datos |
- | SQ-MELF, B | Bulk | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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PCDP2065GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 529pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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PCDP1665GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.6 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 995pF @ 1V, 100kHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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SCS230ANHRTRL650V, 30A, SMD, SILICON-CARBIDE |
892 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.55 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 600 V | 1090pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | LPDS | 175°C |
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PCDP20120GB_T0_00601SIC DIODE 1200V/20A IN TO-220AC |
2,000 |
|
![]() Tabla de datos |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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C6D20065D1SIC, SCHOTTKY DIODE, 64A, 650V, |
866 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 64A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | - | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
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C6D20065HSIC, SCHOTTKY DIODE,66A, 650V, T |
365 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 66A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | - | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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S4D30120HDIODE SIL CARB 1.2KV 94A TO247AC |
1,170 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 94A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 2581pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
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VS-3C30EP12L-M330A 1200V SIC ZERO QRR SINGLE TJ |
494 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.5 V @ 30 A | No Recovery Time > 500mA (Io) | - | 130 µA @ 1200 V | 124pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
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FFSH5065B-F155650V 50A SIC SBD GEN 1.5 |
435 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 48A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 2030pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |