Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
VS-3C10CP12L-M310A 1200V SIC ZERO QRR DUAL TJMA |
500 |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | - | 30 µA @ 1200 V | 20pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
![]() |
SCS205KNHRTRL1200V 5A SMD SILICON CARBIDE |
200 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 260pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263L | 175°C |
![]() |
BSDV10G120E2DIOD SCHOT SIC 1200V 10A TO247-2 |
2,994 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 481pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
![]() |
SCS310AGC16DIODE SIL CARB 650V 10A TO220ACP |
1,000 |
|
- |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
![]() |
PCDG10120GB_L2_00601SIC DIODE 1200V/10A IN TO-252AA |
6,000 |
|
![]() Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
SDS065J016H3-ISATHDIODE 650V-16A TO247-2L |
200 |
|
![]() Tabla de datos |
Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 44A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 48 µA @ 650 V | 837pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
![]() |
IDWD120E120D7XKSA1DIODE GEN PURP 1200V 177A TO247 |
129 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 177A | 3 V @ 120 A | Fast Recovery =< 500ns, > 5A (Io) | 215 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
![]() |
SIT20C065DIODE SIL CARB 650V 20A TO220AC |
970 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 650 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
![]() |
SDS120J010E3-ISARHDIODE 1200V-10A TO263-2L |
200 |
|
![]() Tabla de datos |
Sanan TO263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2L | -55°C ~ 175°C |
![]() |
VS-90EPF12L-M3DIODE GEN PURP 1.2KV 90A TO247AD |
466 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 90A | 1.38 V @ 90 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
![]() |
PCDF0865G1_T0_00601650V/8A THROUGH HOLE SILICON CAR |
2,000 |
|
![]() Tabla de datos |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
![]() |
FFSH3065BDIODE SIL CARB 650V 37A TO247-2 |
326 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 37A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1260pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
![]() |
SDS065J020D3-ISARHDIODE 650V-20A TO252-2L |
200 |
|
![]() Tabla de datos |
Sanan TO252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.5 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1018pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
![]() |
PCDP0865GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 372pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
![]() |
PCDP1065GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
1,961 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 271pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
![]() |
PSC1665JJSIC DIODES AND FETS |
800 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), Variant | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.8 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 475pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK R2P | -55°C ~ 175°C |
![]() |
PCDD1065GB_L2_00601650V/10A IN TO-252AA PACKAGE SIL |
3,000 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 610pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
![]() |
VS-30EPF10-M3DIODE GP 1KV 30A TO247AC |
326 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1000 V | 30A | 1.41 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 450 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
![]() |
JAN1N5809DIODE GEN PURP 100V 6A AXIAL |
117 |
|
![]() Tabla de datos |
- | B, Axial | Bulk | Active | Standard | 100 V | 6A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
![]() |
FFSP15120ADIODE SIL CARB 1.2KV 15A TO220L |
574 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.75 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 1200 V | 936pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |