Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDWD120E65E7XKSA1DIODE GEN PURP 650V 150A TO247-2 |
210 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 650 V | 150A | 2.1 V @ 120 A | Fast Recovery =< 500ns, > 5A (Io) | 98 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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VS-65EPS16L-M3DIODE GEN PURP 1.6KV 65A TO247AD |
184 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1600 V | 65A | 1.17 V @ 65 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
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C6D08065E-TRSIC, SCHOTTKY DIODE, 8A, 650V, T |
2,370 |
|
![]() Tabla de datos |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 518pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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C6D08065G-TRSIC, SCHOTTKY DIODE, 8A, 650V, T |
2,300 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.4 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 518pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
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C3D08065E-TRDIODE SIL CARB 650V 25.5A TO252 |
2,190 |
|
![]() Tabla de datos |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 25.5A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 395pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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STPSC12065DDIODE SIL CARB 650V 12A TO220AC |
749 |
|
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ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 650 V | 750pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
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SDS120J010D3-ISARHDIODE 1200V-10A TO252-2L |
200 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
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BSDD10S65E6DIODE SCHOT SIC 650V 10A TO252 |
4,995 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
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BSDB10S65E6DIODE SCHOT SIC 650V 10A TO263 |
3,170 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
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BSDL10S65E6DIODE SIC SCHTKY 650V 10A DFN8X8 |
2,697 |
|
![]() Tabla de datos |
- | 4-PowerVSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | -55°C ~ 175°C |
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FFSM1265ADIODE SIL CARB 650V 12.5A 4PQFN |
2,585 |
|
![]() Tabla de datos |
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12.5A | 1.75 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 665pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
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PSC1065KQPSC1065K/SOT8021/TO220-2L |
974 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 340pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | 175°C |
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IDWD60E65E7XKSA1DIODE GEN PURP 650V 100A TO247-2 |
187 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 650 V | 100A | 2.1 V @ 60 A | Fast Recovery =< 500ns, > 5A (Io) | 99 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDWD75E120D7XKSA1DIODE GEN PURP 1200V 116A TO247 |
235 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 1200 V | 116A | 3 V @ 75 A | Fast Recovery =< 500ns, > 5A (Io) | 195 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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VS-3C05ET12S2L-M35A 1200V SIC ZERO QRR SINGLE TJM |
796 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | - | 30 µA @ 1200 V | 20pF @ 800V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
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IDWD75E65E7XKSA1DIODE GEN PURP 650V 100A TO247-2 |
210 |
|
![]() Tabla de datos |
- | TO-247-2 | Tube | Active | Standard | 650 V | 100A | 2.1 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 97 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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SDS065J012S3-ISARHDIODE 650V-12A DFN8*8-4L |
200 |
|
![]() Tabla de datos |
Sanan DFN8 | 4-PowerVSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 44A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 36 µA @ 650 V | 651pF @ 0V, 1MHz | - | - | Surface Mount | 4-DFN (8x8) | -55°C ~ 175°C |
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PCDP0865GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
![]() Tabla de datos |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.8 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
APT60D120SGDIODE GEN PURP 1.2KV 60A D3 |
156 |
|
![]() Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Standard | 1200 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 250 µA @ 1200 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
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FFSB2065BDIODE SIL CARB 650V 22.8A D2PAK |
2,178 |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 22.8A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |