Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SDS065J050H3-ISATHDIODE 650V-50A TO247-2L |
148 |
|
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Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 114A | 1.5 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 2970pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
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VS-80APF06-M3DIODE GEN PURP 600V 80A TO247AC |
289 |
|
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- | TO-247-3 | Tube | Active | Standard | 600 V | 80A | 1.25 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 190 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
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VS-85HF40M8DIODE GEN PURP 400V 85A DO203AB |
152 |
|
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 400 V | 85A | 1.2 V @ 267 A | Standard Recovery >500ns, > 200mA (Io) | - | 9 mA @ 400 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 180°C |
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STPSC30G12WL1200 V, 20 A HIGH SURGE SILICON |
166 |
|
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- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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1N5822SCHOTTKY DO201 40V 3A 150C |
131 |
|
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- | B, Axial | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | - | - | Through Hole | B, Axial | -65°C ~ 125°C |
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GP12022-BPSTANDARD RECTIFIER 2200V 120A TO |
1,777 |
|
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- | TO-264-2 | Tape & Reel (TR) | Active | Standard | 2200 V | 120A | 1.31 V @ 120 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 2200 V | - | - | - | Through Hole | TO-264P | -55°C ~ 150°C |
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STPSC40G12WL1200 V, 20 A HIGH SURGE SILICON |
200 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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E6D40065GDIODE SIC 650V 131A TO263 |
1,042 |
|
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E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 131A | 1.5 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 650 V | 2485pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
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SDS170J025H5-ISATHDIODE 1700V-25A TO247-2L |
150 |
|
- |
- | TO-247-2 | Tube | Active | - | 1700 V | 25A | - | - | - | - | - | - | - | Through Hole | TO-247-2L | - |
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SDS120J040H3-ISATHDIODE 1200V-40A TO247-2L |
135 |
|
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Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 98A | 1.6 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 96 µA @ 1200 V | 2648pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
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STPSC30G12WLYAUTOMOTIVE 1200 V, 30 A SILICON |
115 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 225 µA @ 1200 V | 2272pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-247 LL | -55°C ~ 175°C |
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SDS120J050H3-ISATHDIODE 1200V-50A TO247-2L |
145 |
|
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Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 145A | 1.5 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 4547pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
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STPSC40G12WLYAUTOMOTIVE 1200 V, 40A POWER SCH |
200 |
|
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- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IDWD25G200C5XKSA1SIC DISCRETE |
240 |
|
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CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 77A | 1.75 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 375 µA @ 2 kV | 2850pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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NDSH50120C-F155SIC DIODE GEN2.0 1200V TO247-2L |
439 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 53A | 1.75 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 3691pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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IDWD40G200C5XKSA1SIC DISCRETE |
240 |
|
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CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 114A | 1.75 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 2 kV | 4550pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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IDWD50G200C5XKSA1SIC DISCRETE |
240 |
|
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CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 140A | 1.75 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 750 µA @ 2 kV | 5700pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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IDYH80G200C5XKSA1SIC DISCRETE |
240 |
|
- |
CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 157A | 1.75 V @ 80 A | - | - | 1.2 A @ 2000 V | 9100pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
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IDWD80G200C5XKSA1SIC DISCRETE |
240 |
|
![]() Tabla de datos |
CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 214A | 1.75 V @ 80 A | No Recovery Time > 500mA (Io) | 0 ns | 1.2 mA @ 2 kV | 9100pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
|
JANTX1N3891DIODE GEN PURP 200V 12A DO203AA |
96 |
|
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 12A | 1.5 V @ 38 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 10 µA @ 200 V | - | Military | MIL-PRF-19500/304 | Stud Mount | DO-203AA | -65°C ~ 175°C |