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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AMC3M0040120DSICFET N-CH 1200V 15A TO-247 |
750 |
|
Tabla de datos |
* | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | - | 15A (Tc) | 15V, 20V | 40mOhm @ 5A, 10V | 2V @ 250µA (Min) | - | ±25V | - | - | 500W (Tc) | -55°C ~ 155°C (TJ) | - | - | Through Hole | TO-247 |
|
|
AC2M0045170KSIC MOSFET N-CH 1700V 74A TO247- |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 74A | 20V | 70mOhm @ 50A, 20V | 4V @ 18mA | - | +25V, -10V | - | - | 520W | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
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AC2M0045170DSIC MOSFET N-CH 1700V 74A TO247- |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 74A | 20V | 70mOhm @ 50A, 20V | 4V @ 18mA | - | +25V, -10V | - | - | 520W | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
FF06020FASICFET N-CH 650V 101A TOLL |
300 |
|
Tabla de datos |
Falcon | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 101A (Tc) | 18V | 28mOhm @ 35A, 18V | 2.5V @ 60mA | 194 nC @ 15 V | 18V | 4437 pF @ 400 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
|
FF06020J-7ASICFET N-CH 650V 101A TO-263-7L |
300 |
|
Tabla de datos |
Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 101A (Tc) | 18V | 28mOhm @ 35A, 18V | 2.5V @ 60mA | 194 nC @ 15 V | 18V | 4437 pF @ 400 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
|
FF07025FASICFET N-CH 750V 81A TOLL |
300 |
|
- |
Falcon | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 81A (Tc) | 18V | 34mOhm @ 30A, 18V | 2.5V @ 60mA | 174 nC @ 15 V | +18V, -8V | 4604 pF @ 500 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TOLL |
|
|
FF07025J-7ASICFET N-CH 750V 81A TO-263-7L |
300 |
|
- |
Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 81A (Tc) | 18V | 34mOhm @ 30A, 18V | 2.5V @ 60mA | 174 nC @ 15 V | +18V, -8V | 4604 pF @ 500 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-263-7L |
|
|
FF07025QASICFET N-CH 750V 89A TO-247-4L |
300 |
|
- |
Falcon | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 89A (Tc) | 18V | 34mOhm @ 30A, 18V | 2.5V @ 60mA | 174 nC @ 15 V | +18V, -8V | 4604 pF @ 500 V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-4L |
|
|
FF06020QASICFET N-CH 650V 110A TO-247-4L |
300 |
|
- |
Falcon | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 110A (Tc) | 18V | 28mOhm @ 35A, 18V | 2.5V @ 60mA | 194 nC @ 15 V | +18V, -8V | 4437 pF @ 400 V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-4L |
|
|
FF06020E-3ASICFET N-CH 650V 110A TO-247-3L |
300 |
|
Tabla de datos |
Falcon | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 110A (Tc) | 15V, 18V | 28mOhm @ 35A, 18V | 2.5V @ 60mA (Typ) | 194 nC @ 400 V | +18V, -8V | 4437 pF @ 400 V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
|
|
FF07015QASICFET N-CH 750V 136A TO-247-4L |
300 |
|
- |
Falcon | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 136A (Tc) | 18V | 20mOhm @ 50A, 18V | 2.5V @ 100mA | 329 nC @ 15 V | +18V, -8V | 7252 pF @ 500 V | - | 555W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-4L |
|
|
FF06010QASICFET N-CH 650V 169A TO-247-4L |
100 |
|
- |
Falcon | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 169A (Tc) | 18V | 18mOhm @ 60A, 18V | 2.5V @ 100mA | 315 nC @ 15 V | +18V, -8V | 7390 pF @ 400 V | - | 555W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-4L |
|
|
FF06010E-3ASICFET N-CH 650V 169A TO-247-3L |
100 |
|
- |
Falcon | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 169A (Tc) | 15V, 18V | 18mOhm @ 60A, 18V | 2.5V @ 100mA | 315 nC @ 400 V | +18V, -8V | 7390 pF @ 400 V | - | 555W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
|
|
NC1M120C12HTNGSiC MOSFET N 1200V 12mohm 214A |
100 |
|
Tabla de datos |
NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 214A (Tc) | 20V | 20mOhm @ 100A, 20V | 3.5V @ 40mA | - | +20V, -5V | 8330 pF @ 1000 V | - | 938W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
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AMC2M0025120DSICFET N-CH 1200V 20A TO-247 |
500 |
|
Tabla de datos |
* | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | - | 20A (Tc) | 15V, 20V | 25mOhm @ 5A, 10V | 2V @ 250µA (Min) | - | ±25V | - | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
IRLML2803TRPBFMOSFET N-CH 30V 1.2A SOT23 |
830 |
|
Tabla de datos |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.2A (Ta) | 4.5V, 10V | 250mOhm @ 910mA, 10V | 1V @ 250µA | 5 nC @ 10 V | ±20V | 85 pF @ 25 V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro3™/SOT-23 |
|
BSH103,215MOSFET N-CH 30V 850MA TO236AB |
681 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 850mA (Ta) | 2.5V | 400mOhm @ 500mA, 4.5V | 400mV @ 1mA (Min) | 2.1 nC @ 4.5 V | ±8V | 83 pF @ 24 V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-236AB |
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SSM6J501NU,LFMOSFET P-CH 20V 10A 6UDFNB |
468 |
|
Tabla de datos |
U-MOSVI | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta) | 1.5V, 4.5V | 15.3mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9 nC @ 4.5 V | ±8V | 2600 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | 6-UDFNB (2x2) |
|
SI4435FDY-T1-GE3MOSFET P-CH 30V 12.6A 8SOIC |
313 |
|
Tabla de datos |
TrenchFET® Gen III | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 12.6A (Tc) | 4.5V, 10V | 19mOhm @ 9A, 10V | 2.2V @ 250µA | 42 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 4.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SSM3K341TU,LFMOSFET N-CH 60V 6A UFM |
244 |
|
Tabla de datos |
U-MOSVIII-H | 3-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 36mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | ±20V | 550 pF @ 10 V | - | 1.8W (Ta) | 175°C | - | - | Surface Mount | UFM |
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