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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NP110N055PUJ-E1B-AYNP110N055PUJ-E1B-AY - SWITCHINGN |
1,000 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 2.4mOhm @ 55A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 14250 pF @ 25 V | - | 1.8W (Ta), 288W (Tc) | 175°C | - | - | Surface Mount | TO-263-3 |
|
|
QS1700SCM81700v 8AMP SiC Mosfet |
2,500 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 8A | 20V | 100mOhm @ 2A, 20V | 4V @ 10mA | 16 nC @ 1200 V | - | 142 pF @ 1000 V | - | 88W | -55°C ~ 175°C | Automotive | - | Through Hole | PG-TO247-3 |
|
|
RJL5014DPP-E0#T2RJL5014DPP-E0#T2 - SILICON N CHA |
2,240 |
|
- |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Ta) | 10V | 400mOhm @ 9.5A, 10V | 4V @ 1mA | 43 nC @ 10 V | ±30V | 1700 pF @ 25 V | - | 35W (Tc) | 150°C | - | - | Through Hole | TO-220FP |
|
AUIRF1404AUIRF1404 - 20V-40V N-CHANNEL AU |
24,709 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 4mOhm @ 121A, 10V | 4V @ 250µA | 196 nC @ 10 V | ±20V | 5669 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
AUIRF1404AUIRF1404 - 20V-40V N-CHANNEL AU |
9,000 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 4mOhm @ 121A, 10V | 4V @ 250µA | 196 nC @ 10 V | ±20V | 5669 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
GC041N65QFMOSFET N-CH 650V 70A TO-247 |
3,000 |
|
Tabla de datos |
- | TO-247-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 10V | 43mOhm @ 20A, 10V | 5V @ 250µA | 160 nC @ 10 V | ±30V | 7668 pF @ 400 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
AC3M0045065DSIC MOSFET N-CH 650V 50A TO247-3 |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | - | +19V, -8V | - | - | 176W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
AC3M0045065KSIC MOSFET N-CH 650V 50A TO247-4 |
10,000 |
|
Tabla de datos |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | - | +19V, -8V | - | - | 176W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
AC3M0040120KSIC MOSFET N-CH 1200V 67A TO247- |
10,000 |
|
Tabla de datos |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 67A | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
AC2M0040120DSIC MOSFET N-CH 1200V 57A TO247- |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 57A | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | - | +25V, -10V | - | - | 278W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
|
|
AC3M0040120DSIC MOSFET N-CH 1200V 67A TO247- |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 67A | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.5mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
AC3M0032120DSIC MOSFET N-CH 1200V 64A TO247- |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | - | +19V, -8V | - | - | 283W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
AC3M0065090DSIC MOSFET N-CH 900V 37A TO247-3 |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 37A | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | - | +19V, -8V | - | - | 125W | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
|
|
AC3M0065100KSIC MOSFET N-CH 1000V 33A TO247- |
10,000 |
|
Tabla de datos |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 33A | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | - | +19V, -8V | - | - | 113.5W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-4 |
|
|
AC3M0032120KSIC MOSFET N-CH 1200V 64A TO247- |
10,000 |
|
Tabla de datos |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | - | +19V, -8V | - | - | 283W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
FL06100GSICFET N-CH 650V 22A PDFN8x8 |
300 |
|
Tabla de datos |
Lightning | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 22A (Tc) | 15V | 100mOhm @ 10A, 15V | 1.5V @ 14mA | 51 nC @ 12 V | 15V | 1129 pF @ 400 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 4-PDFN (8x8) |
|
|
FF06100FASICFET N-CH 650V 23.5A TOLL |
300 |
|
Tabla de datos |
Falcon | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 23.5A (Tc) | 18V | 100mOhm @ 10A, 18V | 2.5V @ 14mA | 43 nC @ 15 V | 18V | 1000 pF @ 400 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TOLL |
|
|
FF06100J-7SICFET N-CH 650V 20.6A TO-263-7L |
300 |
|
Tabla de datos |
Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 20.6A (Tc) | 18V | 100mOhm @ 10A, 18V | 2.2V @ 14mA | 43 nC @ 15 V | 18V | 1000 pF @ 400 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
|
QS120SCM80D2P1200V N-CHANNEL SIC MOSFET 80 M |
1,000 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 3.8V @ 5mA | 60 nC @ 20 V | +25V, -10V | 1001 pF @ 800 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
FCH041N65F-F085MOSFET N-CH 650V 76A TO247-3 |
163 |
|
Tabla de datos |
SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 250µA | 304 nC @ 10 V | ±20V | 13566 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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