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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTH1N200P3MOSFET N-CH 2000V 1A TO247 |
31 |
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Tabla de datos |
Polar P3™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 1A (Tc) | 10V | 40Ohm @ 500mA, 10V | 4V @ 250µA | 23.5 nC @ 10 V | ±20V | 646 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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MSC035SMA070BMOSFET N-CH 700V TO247 |
85 |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 77A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 2mA | 99 nC @ 20 V | +25V, -10V | 2010 pF @ 700 V | - | 283W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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IXTA02N250HVMOSFET N-CH 2500V 200MA TO263AB |
44 |
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Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 200mA (Tc) | 10V | 450Ohm @ 50mA, 10V | 4.5V @ 250µA | 7.4 nC @ 10 V | ±20V | 116 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA |
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IXFH12N100FMOSFET N-CH 1000V 12A TO247AD |
24 |
|
- |
HiPerFET™, F Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 5.5V @ 4mA | 77 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IMZ120R030M1HXKSA1SICFET N-CH 1.2KV 56A TO247-4 |
88 |
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Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tc) | 15V, 18V | 40mOhm @ 25A, 18V | 5.7V @ 10mA | 63 nC @ 18 V | +23V, -7V | 2120 pF @ 800 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-1 |
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IXFN140N30PMOSFET N-CH 300V 110A SOT-227B |
85 |
|
Tabla de datos |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 110A (Tc) | 10V | 24mOhm @ 70A, 10V | 5V @ 8mA | 185 nC @ 10 V | ±20V | 14800 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
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IMBG120R012M2HXTMA1SIC DISCRETE |
31 |
|
Tabla de datos |
CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 144A (Tc) | 15V, 18V | 12.2mOhm @ 56.7A, 18V | 5.1V @ 17.8mA | 124 nC @ 18 V | +23V, -10V | 4050 pF @ 800 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
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VS-FC420SA15MOSFET N-CH 150V 400A SOT227 |
54 |
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Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 2.75mOhm @ 200A, 10V | 5.4V @ 1mA | 250 nC @ 10 V | ±20V | 13700 pF @ 25 V | - | 909W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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UJ4SC075009B7S750V/9MOHM, N-OFF SIC STACK CASC |
48 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Cascode SiCJFET) | 750 V | 106A (Tc) | 12V | 11.5mOhm @ 70A, 12V | 5.5V @ 10mA | 75 nC @ 15 V | ±20V | 3340 pF @ 400 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
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IXFK240N25X3MOSFET N-CH 250V 240A TO264 |
92 |
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Tabla de datos |
HiPerFET™, Ultra X3 | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 240A (Tc) | 10V | 5mOhm @ 120A, 10V | 4.5V @ 8mA | 345 nC @ 10 V | ±20V | 23800 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
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IXTH24N50LMOSFET N-CH 500V 24A TO247 |
68 |
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Tabla de datos |
Linear | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 20V | 300mOhm @ 500mA, 20V | 5V @ 250µA | 160 nC @ 20 V | ±30V | 2500 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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IXTX200N10L2MOSFET N-CH 100V 200A PLUS247-3 |
6 |
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Tabla de datos |
Linear L2™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 11mOhm @ 100A, 10V | 4.5V @ 3mA | 540 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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NVH4L018N075SC1SIC MOS TO247-4L 750V |
62 |
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Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 140A (Tc) | 15V, 18V | 18mOhm @ 66A, 18V | 4.3V @ 22mA | 262 nC @ 18 V | +22V, -8V | 5010 pF @ 375 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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MSC035SMA170BMOSFET SIC 1700 V 45 MOHM TO-247 |
37 |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 68A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 370W (Tc) | -60°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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MSC040SMA120JSICFET N-CH 1200V 53A SOT227 |
50 |
|
Tabla de datos |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 53A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.8V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
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IXFN300N10PMOSFET N-CH 100V 295A SOT227B |
70 |
|
Tabla de datos |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 295A (Tc) | 10V | 5.5mOhm @ 50A, 10V | 5V @ 8mA | 279 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227B |
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MSC035SMA170B4MOSFET SIC 1700V 35 MOHM TO-247- |
90 |
|
Tabla de datos |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 68A (Tc) | 20V | 45mOhm @ 30A, 20V | 3.25V @ 2.5mA (Typ) | 178 nC @ 20 V | +23V, -10V | 3300 pF @ 1000 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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APT50M65JFLLMOSFET N-CH 500V 58A ISOTOP |
53 |
|
Tabla de datos |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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AIMBG120R010M1XTMA1SIC_DISCRETE |
13 |
|
Tabla de datos |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 187A | - | - | - | - | - | - | - | - | -55°C ~ 175°C | - | - | Surface Mount | PG-TO263-7-12 |
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IMW120R007M1HXKSA1SIC DISCRETE |
88 |
|
Tabla de datos |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 225A (Tc) | 15V, 18V | 9.9mOhm @ 108A, 18V | 5.2V @ 47mA | 289 nC @ 18 V | +20V, -5V | 9170 pF @ 800 V | - | 750W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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