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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AC3M0075120DSIC MOSFET N-CH 1200V 33A TO247- |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A | 15V | 90mOhm @ 20A, 15V | 3.6V @ 5mA | - | +19V, -8V | - | - | 136W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
NTMFS5C404NT1G-01NTMFS5C404NT1G-01 |
47,870 |
|
- |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDBL0150N60FDBL0150N60 - N-CHANNEL POWERTRE |
2,380 |
|
Tabla de datos |
PowerTrench® | 8-PowerSFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 10V | 1.5mOhm @ 80A, 10V | 4V @ 250µA | 169 nC @ 10 V | ±20V | 10300 pF @ 30 V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-HPSOF |
|
|
NVMFS5C404NAFT1G-01N-Channel 40 V 53A (Ta), 378A (T |
1,500 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AUIRFP4110MOSFET N-CH 100V 120A TO247AC |
14,894 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 9620 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
AUIRF7799L2TRMOSFET N-CH 250V 375A DIRECTFT |
5,733 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric L8 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 375A (Tc) | 10V | 38mOhm @ 21A, 10V | 5V @ 250µA | 165 nC @ 10 V | ±30V | 6714 pF @ 25 V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
|
FQA44N30POWER FIELD-EFFECT TRANSISTOR, 4 |
410 |
|
Tabla de datos |
QFET® | TO-3P-3, SC-65-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 43.5A (Tc) | 10V | 69mOhm @ 21.75A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±30V | 5600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
|
FDP039N08B-F102MOSFET N-CH 80V 120A TO220-3 |
399 |
|
Tabla de datos |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 4.5V @ 250µA | 133 nC @ 10 V | ±20V | 9450 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
IRL60SL216IRL60SL216 - 12V-300V N-CHANNEL |
800 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 1.95mOhm @ 100A, 10V | 2.4V @ 250µA | 255 nC @ 4.5 V | ±20V | 15330 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262-3 |
|
|
FCA22N60NPOWER FIELD-EFFECT TRANSISTOR, 2 |
391 |
|
Tabla de datos |
SupreMOS™ | TO-3P-3, SC-65-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 165mOhm @ 11A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±30V | 1950 pF @ 100 V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
|
RJK6013DPP-E0#T2RJK6013DPP-E0#T2 - SILICON N CHA |
1,877 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Ta) | 10V | 700mOhm @ 5.5A, 10V | 4.5V @ 1mA | 37.5 nC @ 10 V | ±30V | 1450 pF @ 25 V | - | 30W (Tc) | 150°C | - | - | Through Hole | TO-220FP |
|
|
NP88N075EUE-E2-AYNP88N075EUE - POWER MOSFETS FOR |
1,600 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 88A (Tc) | 10V | 8.5mOhm @ 44A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 12300 pF @ 25 V | - | 1.8W (Ta), 288W (Tc) | 175°C | - | - | Surface Mount | TO-263-3 |
|
|
RJK5013DPP-E0#T2RJK5013DPP-E0#T2 - SILICON N CHA |
17,001 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Ta) | 10V | 465mOhm @ 7A, 10V | 4.5V @ 1mA | 38 nC @ 10 V | ±30V | 1450 pF @ 25 V | - | 30W (Tc) | 150°C | - | - | Through Hole | TO-220FP |
|
|
RJK5013DPP-00#T2RJK5013DPP - N CHANNEL MOSFET |
2,494 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Ta) | 10V | 465mOhm @ 7A, 10V | 4.5V @ 1mA | 38 nC @ 10 V | ±30V | 1450 pF @ 25 V | - | 30W (Tc) | 150°C | - | - | Through Hole | TO-220FN |
|
|
AC3M0060065KSIC MOSFET N-CH 650V 38A TO247-4 |
10,000 |
|
Tabla de datos |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 38A | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | - | +19V, -8V | - | - | 150W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
AC3M0060065DSIC MOSFET N-CH 650V 30A TO247-3 |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | - | +19V, -8V | - | - | 150W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
AUIRFSL8407MOSFET N-CH 40V 195A TO262 |
1,288 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
RJK5014DPP-E0#T2RJK5014DPP-E0#T2 - SILICON N CHA |
12,236 |
|
Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Ta) | 10V | 390mOhm @ 9.5A, 10V | 4.5V @ 1mA | 46 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 35W (Tc) | 150°C | - | - | Through Hole | TO-220FP |
|
|
FL06150GSICFET N-CH 650V 15A PDFN8x8 |
300 |
|
Tabla de datos |
Lightning | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 15A (Tc) | 15V | 150mOhm @ 5A, 15V | 2V @ 8mA | 29.5 nC @ 12 V | 15V | 672 pF @ 400 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 4-PDFN (8x8) |
|
|
FDMF6808NDRMOS MODULE |
3,000 |
|
- |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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