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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FCH041N65EFL4POWER FIELD-EFFECT TRANSISTOR, N |
232 |
|
Tabla de datos |
FRFET®, SuperFET® II | TO-247-4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 7.6mA | 298 nC @ 10 V | ±20V | 12560 pF @ 100 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
AC3M0025065KSIC MOSFET N-CH 650V 74A TO247-4 |
10,000 |
|
Tabla de datos |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 74A | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
AC3M0030090KSIC MOSFET N-CH 900V 74A TO247-4 |
10,000 |
|
Tabla de datos |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 74A | 15V | 39mOhm @ 35A, 15V | 3.5V @ 11mA | - | +19V, -8V | - | - | 240W | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
AC2M0025120DSIC MOSFET N-CH 1200V 92A TO247- |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 92A | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | - | +25V, -10V | - | - | 378W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
|
|
AC3M0025065DSIC MOSFET N-CH 650V 98A TO247-3 |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 98A | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | - | +19V, -8V | - | - | 326W | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
FF06060J-7ASICFET N-CH 650V 44A TO-263-7L |
300 |
|
Tabla de datos |
Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 44A (Tc) | 18V | 80mOhm @ 15A, 18V | 2.5V @ 20mA | 69 nC @ 15 V | 18V | 1499 pF @ 400 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7L |
|
|
FF06060FASICFET N-CH 650V 44A TOLL |
300 |
|
Tabla de datos |
Falcon | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 44A (Tc) | 18V | 80mOhm @ 15A, 18V | 2.5V @ 20mA | 69 nC @ 15 V | 18V | 1499 pF @ 400 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TOLL |
|
|
FF07075FASICFET N-CH 750V 36A TOLL |
300 |
|
- |
Falcon | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 36A (Tc) | 18V | 95mOhm @ 10A, 18V | 2.5V @ 20mA | 70 nC @ 15 V | +18V, -8V | 1564 pF @ 500 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TOLL |
|
|
FF07075J-7ASICFET N-CH 750V 36A TO-263-7L |
300 |
|
- |
Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 36A (Tc) | 18V | 95mOhm @ 10A, 18V | 2.5V @ 20mA | 70 nC @ 15 V | +18V, -8V | 1564 pF @ 500 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-263-7L |
|
|
FF06060QASICFET N-CH 650V 43A TO-247-4L |
300 |
|
- |
Falcon | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 43A (Tc) | 18V | 80mOhm @ 15A, 18V | 2.5V @ 20mA | 69 nC @ 15 V | +18V, -8V | 1499 pF @ 400 V | - | 202W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | - | TO-247-4L |
|
|
FF06060E-3ASICFET N-CH 650V 43A TO-247-3L |
300 |
|
- |
Falcon | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 43A (Tc) | 18V | 80mOhm @ 15A, 18V | 2.5V @ 20mA | 69 nC @ 15 V | +18V, -8V | 1499 pF @ 400 V | - | 202W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | - | TO-247-3L |
|
|
FF07075QASICFET N-CH 750V 34A TO-247-4L |
300 |
|
- |
Falcon | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 34A (Tc) | 18V | 95mOhm @ 10A, 18V | 2.5V @ 20mA | 70 nC @ 15 V | +18V, -8V | 1564 pF @ 500 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-4L |
|
|
FF07075E-3ASICFET N-CH 750V 34A TO-247-3L |
300 |
|
- |
Falcon | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 34A (Tc) | 18V | 95mOhm @ 10A, 18V | 2.5V @ 20mA | 70 nC @ 15 V | +18V, -8V | 1564 pF @ 500 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-3L |
|
|
AC3M0021120KSIC MOSFET N-CH 1200V 102A TO247 |
10,000 |
|
Tabla de datos |
* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 102A (Tc) | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | - | +19V, -8V | - | - | 469W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
AC3M0021120DSIC MOSFET N-CH 1200V 117A TO247 |
10,000 |
|
Tabla de datos |
* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 82A | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | - | +19V, -8V | - | - | 469W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
FF12080J-7ASICFET N-CH 1200V 31A TO-263-7L |
300 |
|
Tabla de datos |
Falcon | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 112mOhm @ 8A, 18V | 2.5V @ 20mA | 73 nC @ 15 V | 18V | 1548 pF @ 800 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
|
|
NC1M120C75GTNGSiC MOSFET N 1200V 75mohm 47A 3 |
2,400 |
|
Tabla de datos |
NC1M | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.8V @ 5mA | - | +20V, -5V | 1450 pF @ 1000 V | - | 288W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
|
FCH76N60NFPOWER FIELD-EFFECT TRANSISTOR, 7 |
4,950 |
|
Tabla de datos |
SupreMOS™ | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 72.8A (Tc) | 10V | 38mOhm @ 38A, 10V | 5V @ 250µA | 300 nC @ 10 V | ±30V | 11045 pF @ 100 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
FF12080QASICFET N-CH 1200V 29A TO-247-4L |
300 |
|
- |
Falcon | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 29A (Tc) | 18V | 112mOhm @ 8A, 18V | 2.5V @ 20mA | 73 nC @ 15 V | +18V, -8V | 1548 pF @ 800 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-4L |
|
|
FF12080E-3ASICFET N-CH 1200V 29A TO-247-3L |
300 |
|
- |
Falcon | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 29A (Tc) | 18V | 112mOhm @ 8A, 18V | 2.5V @ 20mA | 73 nC @ 15 V | +18V, -8V | 1548 pF @ 800 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | - | TO-247-3L |
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