制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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AUIRFP1405AUIRFP1405 - 55V-60V N-CHANNEL A |
800 | - |
|
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HEXFET® | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 95A (Tc) | 10V | 5.3mOhm @ 95A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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FCP13N60NPOWER FIELD-EFFECT TRANSISTOR, 1 |
2,341 | - |
|
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SupreMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 258mOhm @ 6.5A, 10V | 4V @ 250µA | 39.5 nC @ 10 V | ±30V | 1765 pF @ 100 V | - | 116W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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2SK3435-AZ2SK3435-AZ - SWITCHING N-CHANNEL |
1,213 | - |
|
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- | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 14mOhm @ 40A, 10V | 2.5V @ 1mA | 60 nC @ 10 V | ±20V | 3200 pF @ 10 V | - | 1.5W (Ta), 84W (Tc) | 150°C | - | - | Through Hole | TO-220AB |
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NTMFS4C805NT1GTRENCH 6 30V NCH |
6,000 | - |
|
- |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.9A (Ta) | 4.5V, 10V | 2.8mOhm @ 30A, 10V | 2.2V @ 250µA | 30 nC @ 10 V | ±20V | 1972 pF @ 15 V | - | 770mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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AM90N04-02BMOSFET N-CH 40V 120A TO-263 |
1,000 | - |
|
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDMS86152POWER FIELD-EFFECT TRANSISTOR, 1 |
479 | - |
|
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PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Ta), 45A (Tc) | 6V, 10V | 6mOhm @ 14A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 3370 pF @ 50 V | - | 2.7W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IPT60R102G7E8236XTMA1HIGH POWER_NEW |
6,778 | - |
|
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NP88N04NUG-S18-AYNP88N04NUG-S18-AY - MOS FIELD EF |
1,450 | - |
|
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- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 88A (Tc) | 10V | 3.4mOhm @ 44A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 15000 pF @ 25 V | - | 1.8W (Ta), 200W (Tc) | 175°C | - | - | Through Hole | TO-262 |
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AC3M0280090DSIC MOSFET N-CH 900V 11A TO247-3 |
10,000 | - |
|
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11A | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | - | +19V, -8V | - | - | 45W | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0120100KSIC MOSFET N-CH 1000V 24A TO247- |
10,000 | - |
|
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* | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 24A | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | - | +19V, -8V | - | - | 83W | -55°C ~ 150°C | - | - | Through Hole | TO-247-4 |
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AC2M0160120DSIC MOSFET N-CH 1200V 18A TO247- |
10,000 | - |
|
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 18A | 20V | 196mOhm @ 10A, 20V | 4V @ 2.5mA | - | +25V, -10V | - | - | 125W | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC2M0280120DSIC MOSFET N-CH 1200V 11A TO247- |
10,000 | - |
|
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A | 20V | 370mOhm @ 6A, 20V | 4V @ 1.25mA | - | +25V, -10V | - | - | 69.4W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0160120DSIC MOSFET N-CH 1200V 18A TO247- |
10,000 | - |
|
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 18A | 15V | 208mOhm @ 8.5A, 15V | 3.6V @ 2.33mA | - | +19V, -8V | - | - | 97W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AC3M0350120DSIC MOSFET N-CH 1200V 8A TO247-3 |
10,000 | - |
|
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* | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 8A | 15V | 455mOhm @ 3.6A, 15V | 3.6V @ 1mA | - | +19V, -8V | - | - | 50W | -55°C ~ 150°C | - | - | Through Hole | TO-247-3 |
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AUIRF1324STRLMOSFET N-CH 24V 195A D2PAK |
14,876 | - |
|
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 24 V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 7590 pF @ 24 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRF1324STRLAUIRF1324 - 20V-40V N-CHANNEL AU |
316 | - |
|
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 24 V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 7590 pF @ 24 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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FDBL86563-F085MOSFET N-CH 60V 240A 8HPSOF |
22,000 | - |
|
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PowerTrench® | 8-PowerSFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 10V | 1.5mOhm @ 80A, 10V | 4V @ 250µA | 169 nC @ 10 V | ±20V | 10300 pF @ 30 V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-HPSOF |
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FQAF16N50POWER FIELD-EFFECT TRANSISTOR, 1 |
7,560 | - |
|
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QFET® | TO-3P-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.3A (Tc) | 10V | 320mOhm @ 5.65A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
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NP160N055TUJ-E1-AYNP160N055TUJ-E1-AY - SWITCHINGN- |
1,600 | - |
|
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- | TO-263-7, D2PAK (6 Leads + Tab) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 160A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 10350 pF @ 25 V | - | 1.8W (Ta), 250W (Tc) | 175°C | - | - | Surface Mount | TO-263-7 |
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2SK4092-S35-A2SK4092-S35-A - SWITCHING N-CHAN |
5,520 | - |
|
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- | TO-3P-3, SC-65-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 400mOhm @ 10A, 10V | 3.5V @ 1mA | 50 nC @ 10 V | ±30V | 3240 pF @ 10 V | - | 3W (Ta), 200W (Tc) | 150°C | - | - | Through Hole | TO-3P (MP-88) |