制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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FQP11N40MOSFET N-CH 400V 11.4A TO220-3 Fairchild Semiconductor |
1,919 | - |
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QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 11.4A (Tc) | 10V | 480mOhm @ 5.7A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDMS8690MOSFET N-CH 30V 14A/27A 8MLP Fairchild Semiconductor |
425,565 | - |
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PowerTrench® | 8-PowerWDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 27A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | 3V @ 250µA | 27 nC @ 10 V | ±20V | 1680 pF @ 15 V | - | 2.5W (Ta), 37.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP (5x6), Power56 |
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FDS4470POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
182,552 | - |
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PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 12.5A (Ta) | 10V | 9mOhm @ 12.5A, 10V | 5V @ 250µA | 63 nC @ 10 V | +30V, -20V | 2659 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
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HUF76137P3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
13,040 | - |
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UltraFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 9mOhm @ 75A, 10V | 3V @ 250µA | 72 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 145W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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FDB8896POWER FIELD-EFFECT TRANSISTOR, 8 Fairchild Semiconductor |
8,605 | - |
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PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 67 nC @ 10 V | ±20V | 2525 pF @ 15 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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FDU6696N-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,600 | - |
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PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 50A (Tc) | 4.5V, 10V | 8mOhm @ 13A, 10V | 3V @ 250µA | 24 nC @ 5 V | ±16V | 1715 pF @ 15 V | - | 1.6W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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HUF75831SK8TMOSFET N-CH 150V 3A 8SOIC Fairchild Semiconductor |
1,607 | - |
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UltraFET™ | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 3A (Ta) | 10V | 95mOhm @ 3A, 10V | 4V @ 250µA | 80 nC @ 20 V | ±20V | 1175 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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FQPF16N25MOSFET N-CH 250V 9.5A TO220F Fairchild Semiconductor |
71,828 | - |
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QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 9.5A (Tc) | 10V | 230mOhm @ 4.75A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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HUFA76429D3STMOSFET N-CH 60V 20A TO252AA Fairchild Semiconductor |
38,555 | - |
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UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±16V | 1480 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FDZ7064ASMOSFET N-CH 30V 13.5A 30BGA Fairchild Semiconductor |
32,300 | - |
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PowerTrench® | 30-WFBGA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.5A (Ta) | 4.5V, 10V | 5.6mOhm @ 13.5A, 10V | 3V @ 1mA | 51 nC @ 10 V | ±20V | 1960 pF @ 15 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 30-BGA (4x3.5) |