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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDP6035LN-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,250 |
|
Tabla de datos |
PowerTrench® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 58A (Tc) | 4.5V, 10V | 11mOhm @ 26A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±20V | 1230 pF @ 15 V | - | 75W (Tc) | -65°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
ISL9N308AP3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,200 |
|
Tabla de datos |
UltraFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 75A, 10V | 3V @ 250µA | 68 nC @ 10 V | ±20V | 2600 pF @ 15 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
ISL9N308AS3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,400 |
|
Tabla de datos |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 75A, 10V | 3V @ 250µA | 68 nC @ 10 V | ±20V | 2600 pF @ 15 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB |
|
HUF75333P3MOSFET N-CH 55V 66A TO220-3 Fairchild Semiconductor |
97,924 |
|
Tabla de datos |
UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 66A (Tc) | 10V | 16mOhm @ 66A, 10V | 4V @ 250µA | 85 nC @ 20 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
RF1K4915796N-CHANNEL POWER MOSFET Fairchild Semiconductor |
25,000 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.3A (Ta) | 4.5V, 10V | 30mOhm @ 6.3A, 10V | 3V @ 250µA | 88 nC @ 20 V | ±20V | 1575 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDU8874MOSFET N-CH 30V 18A/116A IPAK Fairchild Semiconductor |
5,400 |
|
Tabla de datos |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 116A (Tc) | 4.5V, 10V | 5.1mOhm @ 35A, 10V | 2.5V @ 250µA | 72 nC @ 10 V | ±20V | 2990 pF @ 15 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
RF1K4915696N-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,500 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.3A (Ta) | 5V | 30mOhm @ 6.3A, 5V | 2V @ 250µA | 65 nC @ 10 V | ±10V | 2030 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
|
FDB4030LN-CHANNEL POWER MOSFET Fairchild Semiconductor |
13,600 |
|
Tabla de datos |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 10V | 55mOhm @ 4.5A, 10V | 2V @ 250µA | 18 nC @ 10 V | ±20V | 365 pF @ 15 V | - | 37.5W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB |
|
|
FDD6676N-CHANNEL POWER MOSFET Fairchild Semiconductor |
8,182 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 78A (Ta) | 4.5V, 10V | 7.5mOhm @ 16.8A, 10V | 3V @ 250µA | 63 nC @ 5 V | ±16V | 5103 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
FDU8586MOSFET N-CH 20V 35A IPAK Fairchild Semiconductor |
6,297 |
|
Tabla de datos |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 4.5V, 10V | 5.5mOhm @ 35A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 2480 pF @ 10 V | - | 77W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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