制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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RF1K49156N-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,660 | - |
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- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.3A (Ta) | 5V | 30mOhm @ 6.3A, 5V | 2V @ 250µA | 65 nC @ 10 V | ±10V | 2030 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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IRFS240BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,420 | - |
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- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 12.8A (Tc) | 10V | 180mOhm @ 6.4A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 1700 pF @ 25 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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FQAF33N10MOSFET N-CH 100V 25.8A TO3PF Fairchild Semiconductor |
1,396 | - |
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QFET® | TO-3P-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 25.8A (Tc) | 10V | 52mOhm @ 12.9A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±25V | 1500 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3PF |
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HUF75229P3MOSFET N-CH 50V 44A TO220-3 Fairchild Semiconductor |
161,050 | - |
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UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 44A (Tc) | 10V | 22mOhm @ 44A, 10V | 4V @ 250µA | 75 nC @ 20 V | ±20V | 1060 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FDMS8672SMOSFET N-CH 30V 17A/35A 8PQFN Fairchild Semiconductor |
13,015 | - |
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PowerTrench® | 8-PowerTDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 35A (Tc) | 4.5V, 10V | 5mOhm @ 17A, 10V | 3V @ 1mA | 47 nC @ 10 V | ±20V | 2515 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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FDR840PMOSFET P-CH 20V 10A SUPERSOT8 Fairchild Semiconductor |
177,354 | - |
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- | 8-TSOP (0.130", 3.30mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta) | 2.5V, 4.5V | 12mOhm @ 10A, 4.5V | 1.5V @ 250µA | 60 nC @ 4.5 V | ±12V | 4481 pF @ 10 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-8 |
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FQP7N65CMOSFET N-CH 650V 7A TO220-3 Fairchild Semiconductor |
24,690 | - |
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QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 1.4Ohm @ 3.5A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1245 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRLR130ATMMOSFET N-CH 100V 13A DPAK Fairchild Semiconductor |
20,775 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 5V | 120mOhm @ 6.5A, 5V | 2V @ 250µA | 24 nC @ 5 V | ±20V | 755 pF @ 25 V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FDD2512MOSFET N-CH 150V 6.7A TO252 Fairchild Semiconductor |
9,940 | - |
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PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 6.7A (Ta) | 6V, 10V | 420mOhm @ 2.2A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 344 pF @ 75 V | - | 42W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FDB4020PMOSFET P-CH 20V 16A TO263AB Fairchild Semiconductor |
5,926 | - |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Ta) | 2.5V, 4.5V | 80mOhm @ 8A, 4.5V | 1V @ 250µA | 13 nC @ 4.5 V | ±8V | 665 pF @ 10 V | - | 37.5W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |