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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HUF75631SK8N-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,572 |
|
Tabla de datos |
UltraFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.5A (Ta) | 10V | 39mOhm @ 5.5A, 10V | 4V @ 250µA | 79 nC @ 20 V | ±20V | 1225 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDS6680MOSFET N-CH 30V 11.5A 8SOIC Fairchild Semiconductor |
25,821 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.5A (Ta) | 4.5V, 10V | 10mOhm @ 11.5A, 10V | 3V @ 250µA | 27 nC @ 5 V | ±20V | 2070 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FQPF9N50YDTUMOSFET N-CH 500V 5.3A TO220F-3 Fairchild Semiconductor |
24,800 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack, Formed Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.3A (Tc) | 10V | 730mOhm @ 2.65A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 1450 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 (Y-Forming) |
|
FDS6670SSMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor |
16,285 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.5A (Ta) | 4.5V, 10V | 9mOhm @ 13.5A, 10V | 3V @ 1mA | 34 nC @ 5 V | ±20V | 2674 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
RF1S530SM9AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
11,640 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.3A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB |
|
FQPF9N50TMOSFET N-CH 500V 5.3A TO220F Fairchild Semiconductor |
11,000 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.3A (Tc) | 10V | 730mOhm @ 2.65A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 1450 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FDD3580MOSFET N-CH 80V 7.7A DPAK Fairchild Semiconductor |
8,500 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 7.7A (Ta) | 6V, 10V | 29mOhm @ 7.7A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±20V | 1760 pF @ 40 V | - | 3.8W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
FQB65N06TMMOSFET N-CH 60V 65A D2PAK Fairchild Semiconductor |
6,179 |
|
Tabla de datos |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 16mOhm @ 32.5A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±25V | 2410 pF @ 25 V | - | 3.75W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
HUF75329D3SMOSFET N-CH 55V 20A TO252AA Fairchild Semiconductor |
3,075 |
|
Tabla de datos |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 10V | 26mOhm @ 20A, 10V | 4V @ 250µA | 65 nC @ 20 V | ±20V | 1060 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FQI11N40TUMOSFET N-CH 400V 11.4A I2PAK Fairchild Semiconductor |
1,875 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 11.4A (Tc) | 10V | 480mOhm @ 5.7A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 3.13W (Ta), 147W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
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