Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IQE004NE1LM7ATMA1TRENCH <= 40V Infineon Technologies |
4,360 |
|
Tabla de datos |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15 V | 58A (Ta), 379A (Tc) | 4.5V, 7V | 0.45mOhm @ 30A, 7V | 2V @ 432µA | 55 nC @ 7 V | ±7V | 6240 pF @ 7.5 V | - | 2.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-5 |
|
IRFSL5615PBFMOSFET N-CH 150V 33A TO262 Infineon Technologies |
964 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±20V | 1750 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IQE220N15NM5CGATMA1TRENCH >=100V Infineon Technologies |
4,970 |
|
Tabla de datos |
OptiMOS™ 5 | 9-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 44A (Tc) | 10V | 22mOhm @ 16A, 10V | 4.6V @ 46µA | 18.3 nC @ 10 V | ±20V | 1400 pF @ 75 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TTFN-9-3 |
|
|
IQE220N15NM5ATMA1TRENCH >=100V Infineon Technologies |
5,000 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 7A (Ta), 44A (Tc) | 8V, 10V | 22mOhm @ 16A, 10V | 4.6V @ 46µA | 18 nC @ 10 V | ±20V | 1400 pF @ 75 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-8-5 |
|
IRF3007STRLPBFMOSFET N CH 75V 62A D2PAK Infineon Technologies |
3,095 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 62A (Tc) | 10V | 12.6mOhm @ 48A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3270 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IPB80N06S209ATMA2MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
777 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8.8mOhm @ 50A, 10V | 4V @ 125µA | 80 nC @ 10 V | ±20V | 2360 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IPA65R310CFDXKSA2MOSFET N-CH 650V 11.4A TO220 Infineon Technologies |
536 |
|
Tabla de datos |
CoolMOS™ CFD2 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPP65R310CFDXKSA2MOSFET N-CH 650V 11.4A TO220-3 Infineon Technologies |
500 |
|
Tabla de datos |
CoolMOS™ CFD2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPI60R190C6XKSA1MOSFET N-CH 600V 20.2A TO262-3 Infineon Technologies |
495 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IPU95R450P7AKMA1MOSFET N-CH 950V 14A TO251-3 Infineon Technologies |
1,500 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 14A (Tc) | 10V | 450mOhm @ 7.2A, 10V | 3.5V @ 360µA | 35 nC @ 10 V | ±20V | 1053 pF @ 400 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
