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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD100N04S4L02ATMA1MOSFET N-CHANNEL_30/40V Infineon Technologies |
2,086 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | 2.2V @ 95µA | 156 nC @ 10 V | +20V, -16V | 12800 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
|
IPP50R250CPXKSA1LOW POWER_LEGACY Infineon Technologies |
500 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36 nC @ 10 V | ±20V | 1420 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPA052N08NM5SXKSA1MOSFET N-CH 80V 64A TO220 Infineon Technologies |
360 |
|
Tabla de datos |
OptiMOS™ 5 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 64A (Tc) | 6V, 10V | 5.2mOhm @ 32A, 10V | 3.8V @ 65µA | 56 nC @ 10 V | ±20V | 3800 pF @ 40 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
|
|
IAUCN08S7N019ATMA1MOSFET_(75V 120V( Infineon Technologies |
4,995 |
|
Tabla de datos |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 175A | 10V | - | - | 19 nC @ 10 V | - | - | - | - | -55°C ~ 175°C | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-43 |
|
|
IRFB3306PBFXKMA1TRENCH 40<-<100V Infineon Technologies |
988 |
|
Tabla de datos |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPB80N06S405ATMA2MOSFET N-CH 60V 80A TO263-3 Infineon Technologies |
231 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 60µA | 81 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
|
IPI80N06S407AKSA2MOSFET N-CH 60V 80A TO262-3 Infineon Technologies |
675 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 40µA | 56 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
|
IPI80N04S403AKSA1MOSFET N-CH 40V 80A TO262-3 Infineon Technologies |
498 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 53µA | 66 nC @ 10 V | ±20V | 5260 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
|
IPB80P04P4L08ATMA2MOSFET P-CH 40V 80A TO263-3 Infineon Technologies |
1,986 |
|
Tabla de datos |
OptiMOS™ P2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 8.2mOhm @ 80A, 10V | 2.2V @ 120µA | 92 nC @ 10 V | +5V, -16V | 5430 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
IPD65R420CFDATMA2MOSFET N-CH 650V 8.7A TO252-3 Infineon Technologies |
2,490 |
|
Tabla de datos |
CoolMOS™ CFD2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-341 |
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