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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IQE022N06LM5SCATMA1OPTIMOS 5 POWER-TRANSISTOR 60V Infineon Technologies |
5,868 |
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Tabla de datos |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Ta), 151A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.3V @ 48µA | 53 nC @ 10 V | ±20V | 4420 pF @ 30 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHSON-8-1 |
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IQE022N06LM5CGSCATMA1OPTIMOS 5 POWER-TRANSISTOR 60V Infineon Technologies |
4,651 |
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Tabla de datos |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Ta), 151A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.3V @ 48µA | 53 nC @ 10 V | ±20V | 4420 pF @ 30 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHTFN-9 |
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IPP034N08N5AKSA1MOSFET N-CH 80V 120A TO220-3 Infineon Technologies |
914 |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 3.4mOhm @ 100A, 10V | 3.8V @ 108µA | 87 nC @ 10 V | ±20V | 6240 pF @ 40 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP030N10N5XKSA1TRENCH >=100V Infineon Technologies |
500 |
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Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.8V @ 184µA | 139 nC @ 10 V | ±20V | 10300 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPL60R210P6AUMA1MOSFET N-CH 600V 19.2A 4VSON Infineon Technologies |
3,000 |
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Tabla de datos |
CoolMOS™ P6 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19.2A (Tc) | 10V | 210mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37 nC @ 10 V | ±20V | 1750 pF @ 100 V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
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IAUA180N08S5N026AUMA1MOSFET_(75V 120V( PG-HSOF-5 Infineon Technologies |
1,468 |
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Tabla de datos |
OptiMOS™ | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 180A (Tj) | 6V, 10V | 2.6mOhm @ 90A, 10V | 3.8V @ 100µA | 87 nC @ 10 V | ±20V | 5980 pF @ 40 V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-4 |
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IQE046N08LM5SCATMA1OPTIMOS 5 POWER-TRANSISTOR 60V Infineon Technologies |
5,670 |
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Tabla de datos |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 15.6A (Ta), 99A (Tc) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 2.3V @ 47µA | 38 nC @ 10 V | ±20V | 3250 pF @ 40 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHSON-8-1 |
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IPA600N25NM3SXKSA1MOSFET N-CH 250V 15A TO220 Infineon Technologies |
276 |
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Tabla de datos |
OptiMOS™ 3 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 15A (Tc) | 10V | 60mOhm @ 15A, 10V | 4V @ 89µA | 29 nC @ 10 V | ±20V | 2300 pF @ 100 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
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IPP089N15NM6AKSA1TRENCH >=100V Infineon Technologies |
1,981 |
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Tabla de datos |
OptiMOS™ 6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 13.6A (Ta), 88A (Tc) | 8V, 15V | 8.4mOhm @ 32A, 15V | 4V @ 73µA | 38 nC @ 10 V | ±20V | 2700 pF @ 75 V | - | 3.8W (Ta), 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPI120N04S401AKSA1MOSFET N-CH 40V 120A TO262-3 Infineon Technologies |
225 |
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Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 1.9mOhm @ 100A, 10V | 4V @ 140µA | 176 nC @ 10 V | ±20V | 14000 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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