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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IAUA220N08S5N021AUMA1MOSFET_(75V 120V( PG-HSOF-5 Infineon Technologies |
2,944 |
|
Tabla de datos |
OptiMOS™ | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 220A (Tj) | 6V, 10V | 2.1mOhm @ 100A, 10V | 3.8V @ 120µA | 105 nC @ 10 V | ±20V | 7219 pF @ 40 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-4 |
|
IPF012N06NF2SATMA1TRENCH 40<-<100V Infineon Technologies |
245 |
|
Tabla de datos |
StrongIRFET™2 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 41A (Ta), 282A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.3V @ 186µA | 233 nC @ 10 V | ±20V | 10500 pF @ 30 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-U02 |
|
|
IPL65R160CFD7AUMA1COOLMOS CFD7 SUPERJUNCTION MOSFE Infineon Technologies |
2,650 |
|
Tabla de datos |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 17A (Tc) | 10V | 160mOhm @ 6.4A, 10V | 4.5V @ 320µA | 28 nC @ 10 V | ±20V | 1283 pF @ 400 V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
IPBE65R190CFD7AATMA1MOSFET N-CH 650V 14A TO263-7 Infineon Technologies |
0 |
|
Tabla de datos |
CoolMOS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | - | 190mOhm @ 6.4A, 10V | 4.5V @ 320µA | 7 nC @ 10 V | ±20V | 1291 pF @ 400 V | - | 77W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-11 |
|
IPT60R150G7XTMA1MOSFET N-CH 600V 17A 8HSOF Infineon Technologies |
1,304 |
|
Tabla de datos |
CoolMOS™ G7 | 8-PowerSFN | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 150mOhm @ 5.3A, 10V | 4V @ 260µA | 23 nC @ 10 V | ±20V | 902 pF @ 400 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
IPA030N10NF2SXKSA1TRENCH >=100V PG-TO220-3 Infineon Technologies |
0 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 83A (Tc) | 6V, 10V | 3mOhm @ 50A, 10V | 3.8V @ 169µA | 154 nC @ 10 V | ±20V | 7300 pF @ 50 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
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IPT60R125CFD7XTMA1MOSFET N-CH 600V 21A 8HSOF Infineon Technologies |
1,989 |
|
Tabla de datos |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 125mOhm @ 6.8A, 10V | 4.5V @ 340µA | 31 nC @ 10 V | ±20V | 1330 pF @ 400 V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
|
IPF023N08NF2SATMA1TRENCH 40<-<100V PG-TO263-7 Infineon Technologies |
800 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 209A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 139µA | 133 nC @ 10 V | ±20V | 6200 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-14 |
|
IPDD60R125CFD7XTMA1MOSFET N-CH 600V 27A HDSOP-10 Infineon Technologies |
1,688 |
|
Tabla de datos |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 27A (Tc) | - | 125mOhm @ 6.8A, 10V | 4.5V @ 340µA | 31 nC @ 10 V | ±20V | 1329 pF @ 400 V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
|
IPB180N06S4H1ATMA2MOSFET N-CH 60V 180A TO263-7 Infineon Technologies |
7,667 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 180A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4V @ 200µA | 270 nC @ 10 V | ±20V | 21900 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
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