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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFP3703PBFMOSFET N-CH 30V 210A TO247AC Infineon Technologies |
2,709 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 210A (Tc) | 7V, 10V | 2.8mOhm @ 76A, 10V | 4V @ 250µA | 209 nC @ 10 V | ±20V | 8250 pF @ 25 V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
IPL60R125C7AUMA1MOSFET N-CH 600V 17A 4VSON Infineon Technologies |
6,000 |
|
Tabla de datos |
CoolMOS™ C7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 103W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
IST026N10NM5AUMA1TRENCH >=100V PG-HSOF-5 Infineon Technologies |
1,663 |
|
Tabla de datos |
OptiMOS™ 5 | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Ta), 248A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.8V @ 148µA | 125 nC @ 10 V | ±20V | 6300 pF @ 50 V | - | 3.8W (Ta), 313W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-4 |
|
IPP60R165CPXKSA1MOSFET N-CH 600V 21A TO220-3 Infineon Technologies |
365 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPP60R105CFD7XKSA1MOSFET N CH Infineon Technologies |
157 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 105mOhm @ 9.3A, 10V | 4.5V @ 470µA | 42 nC @ 10 V | ±20V | 1752 pF @ 400 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
AUIRFR4620TRLMOSFET N-CH 200V 24A DPAK Infineon Technologies |
5,650 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 78mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IPL65R130C7AUMA1MOSFET N-CH 650V 15A 4VSON Infineon Technologies |
3,088 |
|
Tabla de datos |
CoolMOS™ C7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 130mOhm @ 4.4A, 10V | 4V @ 440µA | 35 nC @ 10 V | ±20V | 1670 pF @ 400 V | - | 102W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
IPL65R115CFD7AUMA1COOLMOS CFD7 SUPERJUNCTION MOSFE Infineon Technologies |
3,000 |
|
Tabla de datos |
CoolMOS™ | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 115mOhm @ 9.7A, 10V | 4.5V @ 480µA | 41 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 144W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
|
SPP20N65C3XKSA1MOSFET N-CH 650V 20.7A TO220-3 Infineon Technologies |
454 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPW65R125CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
235 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 125mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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