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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB180N04S4H0ATMA1MOSFET N-CH 40V 180A TO263-7-3 Infineon Technologies |
1,573 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 1.1mOhm @ 100A, 10V | 4V @ 180µA | 225 nC @ 10 V | ±20V | 17940 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
IPBE65R230CFD7AATMA1MOSFET N-CH 650V 11A TO263-7 Infineon Technologies |
1,931 |
|
Tabla de datos |
CoolMOS™ CFD7A | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 230mOhm @ 5.2A, 10V | 4.5V @ 260µA | 23 nC @ 10 V | ±20V | 1044 pF @ 400 V | - | 63W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-3-10 |
|
IPB024N08NF2SATMA1TRENCH 40<-<100V PG-TO263-3 Infineon Technologies |
604 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 107A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.8V @ 85µA | 133 nC @ 10 V | ±20V | 6200 pF @ 40 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPP65R155CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
157 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 155mOhm @ 6.4A, 10V | 4.5V @ 320µA | 28 nC @ 10 V | ±20V | 1283 pF @ 400 V | - | 77W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IRFS7534TRLPBFMOSFET N CH 60V 195A D2PAK Infineon Technologies |
2,332 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.7V @ 250µA | 279 nC @ 10 V | ±20V | 10034 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
|
IPW60R180P7XKSA1MOSFET N-CH 650V 18A TO247-3 Infineon Technologies |
178 |
|
Tabla de datos |
CoolMOS™ P7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25 nC @ 10 V | ±20V | 1081 pF @ 400 V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
|
AUIRF7675M2TRMOSFET N-CH 150V 4.4A DIRECTFET Infineon Technologies |
9,508 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric M2 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4.4A (Ta), 18A (Tc) | 10V | 56mOhm @ 11A, 10V | 5V @ 100µA | 32 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 2.7W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric M2 |
|
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IPP60R145CFD7XKSA1MOSFET N CH Infineon Technologies |
479 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 145mOhm @ 6.8A, 10V | 4.5V @ 340µA | 31 nC @ 10 V | ±20V | 1330 pF @ 400 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPP60R160P6XKSA1MOSFET N-CH 600V 23.8A TO220-3 Infineon Technologies |
338 |
|
Tabla de datos |
CoolMOS™ P6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44 nC @ 10 V | ±20V | 2080 pF @ 100 V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPDD60R145CFD7XTMA1MOSFET N-CH 600V 24A HDSOP-10 Infineon Technologies |
3,296 |
|
Tabla de datos |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | - | 145mOhm @ 6A, 10V | 4.5V @ 300µA | 28 nC @ 10 V | ±20V | 1199 pF @ 400 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
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