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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IQE030N06NM5CGSCATMA1OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies |
6,000 |
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Tabla de datos |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 21A (Ta), 132A (Tc) | 6V, 10V | 3mOhm @ 20A, 10V | 3.3V @ 50µA | 49 nC @ 10 V | ±20V | 3800 pF @ 30 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHTFN-9-1 |
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IQE050N08NM5SCATMA1OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies |
5,000 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 16A (Ta), 99A (Tc) | 6V, 10V | 5mOhm @ 20A, 10V | 3.8V @ 49µA | 44 nC @ 10 V | ±20V | 2900 pF @ 40 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHSON-8-1 |
|
IPP034NE7N3GXKSA1MOSFET N-CH 75V 100A TO220-3 Infineon Technologies |
1,425 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 3.4mOhm @ 100A, 10V | 3.8V @ 155µA | 117 nC @ 10 V | ±20V | 8130 pF @ 37.5 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IQE030N06NM5SCATMA1OPTIMOS LOWVOLTAGE POWER MOSFET Infineon Technologies |
4,990 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 21A (Ta), 132A (Tc) | 6V, 10V | 3mOhm @ 20A, 10V | 3.3V @ 50µA | 49 nC @ 10 V | ±20V | 3800 pF @ 30 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHSON-8-1 |
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IPB040N08NF2SATMA1MOSFET N-CH 80V 107A D2PAK Infineon Technologies |
790 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 107A (Tc) | 6V, 10V | 4mOhm @ 80A, 10V | 3.8V @ 85µA | 81 nC @ 10 V | ±20V | 3800 pF @ 40 V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IAUT165N08S5N029ATMA2MOSFET N-CH 80V 165A 8HSOF Infineon Technologies |
1,980 |
|
Tabla de datos |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 165A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | 3.8V @ 108µA | 90 nC @ 10 V | ±20V | 6370 pF @ 40 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-1 |
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IPF039N08NF2SATMA1TRENCH 40<-<100V PG-TO263-7 Infineon Technologies |
682 |
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Tabla de datos |
StrongIRFET™ 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 126A (Tc) | 6V, 10V | 3.9mOhm @ 80A, 10V | 3.8V @ 85µA | 81 nC @ 10 V | ±20V | 3800 pF @ 40 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-14 |
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IPB80N04S2H4ATMA2MOSFET N-CHANNEL_30/40V Infineon Technologies |
602 |
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Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 148 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPL60R160CFD7AUMA1MOSFET N CH Infineon Technologies |
3,039 |
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Tabla de datos |
CoolMOS™ CFD7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 160mOhm @ 6.8A, 10V | 4.5V @ 340µA | 31 nC @ 10 V | ±20V | 1330 pF @ 400 V | - | 95W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4-1 |
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IRF6674TRPBFMOSFET N-CH 60V 13.4A DIRECTFET Infineon Technologies |
13,534 |
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Tabla de datos |
HEXFET® | DirectFET™ Isometric MZ | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13.4A (Ta), 67A (Tc) | 10V | 11mOhm @ 13.4A, 10V | 4.9V @ 100µA | 36 nC @ 10 V | ±20V | 1350 pF @ 25 V | - | 3.6W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MZ |
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