Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPL60R095CFD7AUMA1MOSFET N CH Infineon Technologies |
1,750 |
|
Tabla de datos |
CoolMOS™ CFD7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 95mOhm @ 1.4A, 10V | 4.5V @ 570µA | 51 nC @ 10 V | ±20V | 2103 pF @ 400 V | - | 147W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4-1 |
|
IPT60R090CFD7XTMA1MOSFET N-CH 600V 28A 8HSOF Infineon Technologies |
1,960 |
|
Tabla de datos |
CoolMOS™ CFD7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 90mOhm @ 9.3A, 10V | 4.5V @ 470µA | 42 nC @ 10 V | ±20V | 1752 pF @ 400 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
|
IPDQ60R065S7XTMA1HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies |
645 |
|
Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 12V | 65mOhm @ 8A, 12V | 4.5V @ 490µA | 51 nC @ 12 V | ±20V | 1932 pF @ 300 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
|
IPB65R115CFD7AATMA1AUTOMOTIVE_COOLMOS PG-TO263-3 Infineon Technologies |
959 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 115mOhm @ 9.7A, 10V | 4.5V @ 490µA | 41 nC @ 10 V | ±20V | 1950 pF @ 400 V | - | 114W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPP60R090CFD7XKSA1MOSFET N-CH 600V 25A TO220-3 Infineon Technologies |
462 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 90mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51 nC @ 10 V | ±20V | 2103 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPB80N08S207ATMA1MOSFET N-CH 75V 80A TO263-3 Infineon Technologies |
409 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 7.1mOhm @ 80A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IPB100N12S305ATMA1MOSFET N-CH 120V 100A TO263-3 Infineon Technologies |
3,882 |
|
Tabla de datos |
OptiMOS™ | TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 185 nC @ 10 V | ±20V | 11570 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-1 |
|
|
SPP24N60C3XKSA1MOSFET N-CH 650V 24.3A TO220-3 Infineon Technologies |
126 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24.3A (Tc) | 10V | 160mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 135 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPT063N15N5ATMA1TRENCH >=100V PG-HSOF-8 Infineon Technologies |
3,916 |
|
Tabla de datos |
OptiMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 16.2A (Ta), 122A (Tc) | 8V, 10V | 6.3mOhm @ 50A, 10V | 4.6V @ 153µA | 59 nC @ 10 V | ±20V | 4550 pF @ 75 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8 |
|
|
IPW65R110CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
221 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 110mOhm @ 9.7A, 10V | 4.5V @ 480µA | 41 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
