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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPF016N06NF2SATMA1TRENCH 40<-<100V Infineon Technologies |
989 |
|
Tabla de datos |
StrongIRFET™2 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 35A (Ta), 223A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.3V @ 129µA | 162 nC @ 10 V | ±20V | 7300 pF @ 30 V | - | 3.8W (Ta), 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-U02 |
|
|
IPD95R450PFD7ATMA1MOSFET N-CH 950V 13.3A TO252-3 Infineon Technologies |
2,466 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 13.3A (Tc) | 10V | 450mOhm @ 7.2A, 10V | 3.5V @ 360µA | 43 nC @ 10 V | ±20V | 1230 pF @ 400 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
BSC011N03LSTATMA1MOSFET N-CH 30V 39A/100A TDSON Infineon Technologies |
5,000 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 39A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2V @ 250µA | 48 nC @ 4.5 V | ±20V | 6300 pF @ 15 V | - | 3W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
|
IPA60R125CFD7XKSA1MOSFET N-CH 600V 11A TO220 Infineon Technologies |
729 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36 nC @ 10 V | ±20V | 1503 pF @ 400 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
|
IPP60R210CFD7XKSA1MOSFET N CH Infineon Technologies |
435 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 210mOhm @ 4.9A, 10V | 4.5V @ 240µA | 23 nC @ 10 V | ±20V | 1015 pF @ 400 V | - | 64W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
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IPA60R180C7XKSA1MOSFET N-CH 600V 9A TO220-FP Infineon Technologies |
203 |
|
Tabla de datos |
CoolMOS™ C7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 180mOhm @ 5.3A, 10V | 4V @ 260µA | 24 nC @ 10 V | ±20V | 1080 pF @ 400 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220 Full Pack |
|
|
IPF013N04NF2SATMA1TRENCH <= 40V Infineon Technologies |
800 |
|
Tabla de datos |
StrongIRFET™2 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Ta), 232A (Tc) | 6V, 10V | 1.35mOhm @ 100A, 10V | 3.4V @ 126µA | 159 nC @ 10 V | ±20V | 7500 pF @ 20 V | - | 3.8W (Ta), 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-U02 |
|
IPA80R460CEXKSA2MOSFET N-CH 800V 10.8A TO220 Infineon Technologies |
500 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 10.8A (Ta) | 10V | 460mOhm @ 7.1A, 10V | 3.9V @ 680µA | 64 nC @ 10 V | ±20V | 1600 pF @ 100 V | - | 34W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
|
IRFS7734TRLPBFMOSFET N-CH 75V 183A D2PAK Infineon Technologies |
296 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10150 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
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IQE050N08NM5CGATMA1TRENCH 40<-<100V PG-TTFN-9 Infineon Technologies |
9,687 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 16A (Ta), 101A (Tc) | 6V, 10V | 5mOhm @ 20A, 10V | 3.8V @ 49µA | 43.2 nC @ 10 V | ±20V | 2900 pF @ 40 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TTFN-9-1 |
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