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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPB049N08N5ATMA1MOSFET N-CH 80V 80A D2PAK Infineon Technologies |
1,834 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 4.9mOhm @ 80A, 10V | 3.8V @ 66µA | 53 nC @ 10 V | ±20V | 3770 pF @ 40 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPF042N10NF2SATMA1MOSFET Infineon Technologies |
281 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 21A (Ta), 139A (Tc) | 6V, 10V | 4.25mOhm @ 80A, 10V | 3.8V @ 93µA | 85 nC @ 10 V | ±20V | 4000 pF @ 50 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
|
IPB026N06NATMA1MOSFET N-CH 60V 25A/100A D2PAK Infineon Technologies |
2,911 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Ta), 100A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 2.8V @ 75µA | 56 nC @ 10 V | ±20V | 4100 pF @ 30 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPI90N04S402AKSA1MOSFET N-CH 40V 90A TO262-3 Infineon Technologies |
439 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 2.5mOhm @ 90A, 10V | 4V @ 95µA | 118 nC @ 10 V | ±20V | 9430 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
|
IPB120N04S402ATMA1MOSFET N-CH 40V 120A D2PAK Infineon Technologies |
3,008 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 1.8mOhm @ 100A, 10V | 4V @ 110µA | 134 nC @ 10 V | ±20V | 10740 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
IQE065N10NM5CGATMA1TRENCH >=100V PG-TTFN-9 Infineon Technologies |
9,915 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Ta), 85A (Tc) | 6V, 10V | 6.5mOhm @ 20A, 10V | 3.8V @ 48µA | 42 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TTFN-9-1 |
|
IPP77N06S212AKSA2MOSFET N-CH 55V 77A TO220-3 Infineon Technologies |
495 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 77A (Tc) | 10V | 12mOhm @ 38A, 10V | 4V @ 93µA | 60 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IAUA250N04S6N008AUMA1OPTIMOS POWER MOSFET Infineon Technologies |
1,950 |
|
Tabla de datos |
OptiMOS™ 6 | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 51A (Ta) | 7V, 10V | 0.8mOhm @ 100A, 10V | 3V @ 90µA | 109 nC @ 10 V | ±20V | 7088 pF @ 25 V | - | 172W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOF-5-1 |
|
IPB160N04S4H1ATMA1MOSFET N-CH 40V 160A TO263-7 Infineon Technologies |
770 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 4V @ 110µA | 137 nC @ 10 V | ±20V | 10920 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
IPA057N08N3GXKSA1MOSFET N-CH 80V 60A TO220-FP Infineon Technologies |
440 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 6V, 10V | 5.7mOhm @ 60A, 10V | 3.5V @ 90µA | 69 nC @ 10 V | ±20V | 4750 pF @ 40 V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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