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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPA60R380E6XKSA1MOSFET N-CH 600V 10.6A TO220-FP Infineon Technologies |
150 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IRFB7734PBFMOSFET N-CH 75V 183A TO220AB Infineon Technologies |
6,364 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10150 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IAUA120N04S5N014AUMA1MOSFET_(20V 40V) PG-HSOF-5 Infineon Technologies |
3,965 |
|
Tabla de datos |
OptiMOS™ | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 7V, 10V | 1.4mOhm @ 60A, 10V | 3.4V @ 60µA | 82 nC @ 10 V | ±20V | 4828 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-2 |
|
IPB100N04S4H2ATMA1MOSFET N-CH 40V 100A TO263-3 Infineon Technologies |
4,996 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 70µA | 90 nC @ 10 V | ±20V | 7180 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IPL60R285P7AUMA1MOSFET N-CH 600V 13A 4VSON Infineon Technologies |
5,930 |
|
Tabla de datos |
CoolMOS™ P7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 285mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 59W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
IRF6623TRPBFMOSFET N-CH 20V 16A DIRECTFET Infineon Technologies |
8,465 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Ta), 55A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.2V @ 250µA | 17 nC @ 4.5 V | ±20V | 1360 pF @ 10 V | - | 1.4W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ ST |
|
IPF050N10NF2SATMA1MOSFET Infineon Technologies |
1,311 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Ta), 117A (Tc) | 6V, 10V | 5.05mOhm @ 60A, 10V | 3.8V @ 84µA | 76 nC @ 10 V | ±20V | 3600 pF @ 50 V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
|
AUIRF7647S2TRMOSFET N-CH 100V 5.9A DIRECTFET Infineon Technologies |
3,147 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric SC | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.9A (Ta), 24A (Tc) | 10V | 31mOhm @ 14A, 10V | 5V @ 50µA | 21 nC @ 10 V | ±20V | 910 pF @ 25 V | - | 2.5W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DIRECTFET™ SC |
|
AUIRFR3806TRLMOSFET N-CH 60V 43A DPAK Infineon Technologies |
6,519 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
AUIRFR8403TRLMOSFET N-CH 40V 100A DPAK Infineon Technologies |
2,457 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99 nC @ 10 V | ±20V | 3171 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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