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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPC100N04S5L1R1ATMA1MOSFET N-CH 40V 100A 8TDSON-34 Infineon Technologies |
9,641 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2V @ 90µA | 140 nC @ 10 V | ±16V | 8250 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-34 |
|
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IPC100N04S51R2ATMA1MOSFET N-CH 40V 100A 8TDSON-34 Infineon Technologies |
6,897 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 7V, 10V | 1.2mOhm @ 50A, 10V | 3.4V @ 90µA | 131 nC @ 10 V | ±20V | 7650 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-34 |
|
IPB055N08NF2SATMA1TRENCH 40<-<100V PG-TO263-3 Infineon Technologies |
449 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 94A (Tc) | 6V, 10V | 5.5mOhm @ 60A, 10V | 3.8V @ 55µA | 54 nC @ 10 V | ±20V | 2500 pF @ 40 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
SPD04N60C3ATMA1MOSFET N-CH 600V 4.5A TO252-3 Infineon Technologies |
2,494 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPP055N08NF2SAKMA1TRENCH 40<-<100V Infineon Technologies |
139 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 18.5A (Ta), 99A (Tc) | 6V, 10V | 5.5mOhm @ 60A, 10V | 3.8V @ 55µA | 54 nC @ 10 V | ±20V | 2500 pF @ 40 V | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
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IPB029N06NF2SATMA1TRENCH 40<-<100V Infineon Technologies |
1,613 |
|
Tabla de datos |
StrongIRFET™2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 26A (Ta), 120A (Tc) | 6V, 10V | 2.9mOhm @ 70A, 10V | 3.3V @ 80µA | 102 nC @ 10 V | ±20V | 4600 pF @ 30 V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
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IPD90N06S404ATMA2MOSFET N-CH 60V 90A TO252-31 Infineon Technologies |
8,004 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 3.8mOhm @ 90A, 10V | 4V @ 90µA | 128 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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IPAN60R210PFD7SXKSA1MOSFET N-CH 650V 16A TO220 Infineon Technologies |
781 |
|
Tabla de datos |
CoolMOS™PFD7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 16A (Tc) | 10V | 210mOhm @ 4.9A, 10V | 4.5V @ 240µA | 23 nC @ 10 V | ±20V | 1015 pF @ 400 V | - | 25W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
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IPD90N06S4L03ATMA2MOSFET N-CH 60V 90A TO252-31 Infineon Technologies |
7,406 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.5mOhm @ 90A, 10V | 2.2V @ 90µA | 170 nC @ 10 V | ±16V | 13000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
|
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IPD038N06N3GATMA1MOSFET N-CH 60V 90A TO252-3 Infineon Technologies |
2,376 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 3.8mOhm @ 90A, 10V | 4V @ 90µA | 98 nC @ 10 V | ±20V | 8000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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