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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSZ0503NSIATMA1MOSFET N-CH 30V 20A/40A TSDSON Infineon Technologies |
3,716 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 3.4mOhm @ 20A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1300 pF @ 15 V | - | 2.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
|
IRFH7545TRPBFMOSFET N-CH 60V 85A PQFN Infineon Technologies |
3,440 |
|
Tabla de datos |
StrongIRFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 85A (Tc) | 6V, 10V | 5.2mOhm @ 51A, 10V | 3.7V @ 100µA | 110 nC @ 10 V | ±20V | 3890 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
IPD80R1K4CEATMA1MOSFET N-CH 800V 3.9A TO252-3 Infineon Technologies |
2,486 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23 nC @ 10 V | ±20V | 570 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPW60R160P6FKSA1MOSFET N-CH 600V 23.8A TO247-3 Infineon Technologies |
239 |
|
Tabla de datos |
CoolMOS™ P6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44 nC @ 10 V | ±20V | 2080 pF @ 100 V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
|
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BSC018NE2LSIATMA1MOSFET N-CH 25V 29A/100A TDSON Infineon Technologies |
9,768 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 2V @ 250µA | 36 nC @ 10 V | ±20V | 2500 pF @ 12 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
|
IPA50R280CEXKSA2MOSFET N-CH 500V 7.5A TO220 Infineon Technologies |
450 |
|
Tabla de datos |
CoolMOS™ CE | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.5A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | ±20V | 773 pF @ 100 V | - | 30.4W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-FP |
|
|
IPA65R400CEXKSA1MOSFET N-CH 650V TO220 Infineon Technologies |
192 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15.1A (Tc) | 10V | 400mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
|
IPB45N06S4L08ATMA3MOSFET N-CH 60V 45A TO263-3 Infineon Technologies |
2,986 |
|
Tabla de datos |
OptiMOS™ T2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 4.5V, 10V | 7.9mOhm @ 45A, 10V | 2.2V @ 35µA | 64 nC @ 10 V | ±16V | 4780 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
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IPD90N06S405ATMA2MOSFET N-CH 60V 90A TO252-31 Infineon Technologies |
0 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 5.1mOhm @ 90A, 10V | 4V @ 60µA | 81 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
|
BSZ017NE2LS5IATMA1MOSFET N-CH 25V 27A/40A TSDSON Infineon Technologies |
9,200 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 27A (Ta), 40A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2V @ 250µA | 30 nC @ 10 V | ±16V | 2000 pF @ 12 V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
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