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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRF540ZXKMA1MOSFET_(75V 120V( Infineon Technologies |
3,053 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-904 |
|
IRL2203NSTRLPBFMOSFET N-CH 30V 116A D2PAK Infineon Technologies |
2,504 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60 nC @ 4.5 V | ±16V | 3290 pF @ 25 V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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ISK018NE1LM7AULA1ISK018NE1LM7AULA1 MOSFET Infineon Technologies |
4,901 |
|
Tabla de datos |
OptiMOS™ 7 | 6-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 15 V | 30A (Ta), 129A (Tc) | 4.5V, 7V | 1.8mOhm @ 20A, 7V | 2V @ 106µA | 13.6 nC @ 7 V | ±7V | 1600 pF @ 7.5 V | - | 2.1W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-6-1 |
|
IRF6646TR1MOSFET N-CH 80V 12A DIRECTFET Infineon Technologies |
3,462 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 12A (Ta), 68A (Tc) | 10V | 9.5mOhm @ 12A, 10V | 4.9V @ 150µA | 50 nC @ 10 V | ±20V | 2060 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MN |
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SPI80N06S-08MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
4,414 |
|
Tabla de datos |
SIPMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 80A, 10V | 4V @ 240µA | 187 nC @ 10 V | ±20V | 3660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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IPP120P04P4L03AKSA1MOSFET P-CH 40V 120A TO220-3 Infineon Technologies |
2,559 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 100A, 10V | 2.2V @ 340µA | 234 nC @ 10 V | ±16V | 15000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3-1 |
|
IRFB17N20DMOSFET N-CH 200V 16A TO220AB Infineon Technologies |
2,074 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF7809AVTRPBFMOSFET N-CH 30V 13.3A 8SO Infineon Technologies |
4,323 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.3A (Ta) | 4.5V | 9mOhm @ 15A, 4.5V | 1V @ 250µA | 62 nC @ 5 V | ±12V | 3780 pF @ 16 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRL530NLMOSFET N-CH 100V 17A TO262 Infineon Technologies |
2,885 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±20V | 800 pF @ 25 V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
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BSO303SPNTMA1MOSFET P-CH 30V 8.9A 8DSO Infineon Technologies |
2,093 |
|
Tabla de datos |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 8.9A (Ta) | 4.5V, 10V | 21mOhm @ 8.9A, 10V | 2V @ 100µA | 69 nC @ 10 V | ±20V | 1754 pF @ 25 V | - | 2.35W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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