Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPB100N06S2L-05MOSFET N-CH 55V 100A TO263-3 Infineon Technologies |
3,804 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 7530 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IRF3704MOSFET N-CH 20V 77A TO220AB Infineon Technologies |
3,230 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | 1996 pF @ 10 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
;;3.jpg)
|
IRFU3910MOSFET N-CH 100V 16A IPAK Infineon Technologies |
2,739 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
|
|
IRF4905STRRMOSFET P-CH 55V 74A D2PAK Infineon Technologies |
2,004 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 74A (Tc) | 10V | 20mOhm @ 38A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IPB60R199CPAATMA1MOSFET N-CH 600V 16A D2PAK Infineon Technologies |
3,004 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 1.1mA | 43 nC @ 10 V | ±20V | 1520 pF @ 100 V | - | 139W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
|
|
IRL8113SMOSFET N-CH 30V 105A D2PAK Infineon Technologies |
3,041 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 105A (Tc) | 4.5V, 10V | 6mOhm @ 21A, 10V | 2.25V @ 250µA | 35 nC @ 4.5 V | ±20V | 2840 pF @ 15 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
ISC0803NLSATMA1MOSFET N-CH 100V 8.8A/37A 8TDSON Infineon Technologies |
3,192 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.8A (Ta), 37A (Tc) | 4.5V, 10V | 16.9mOhm @ 20A, 10V | 2.3V @ 18µA | 15 nC @ 10 V | ±20V | 1000 pF @ 50 V | - | 2.5W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
|
IRLI530NMOSFET N-CH 100V 12A TO220AB FP Infineon Technologies |
4,868 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IRLIB4343MOSFET N-CH 55V 19A TO220AB FP Infineon Technologies |
4,249 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42 nC @ 10 V | ±20V | 740 pF @ 50 V | - | 39W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
|
IRF6635TR1MOSFET N-CH 30V 32A DIRECTFET Infineon Technologies |
3,985 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 250µA | 71 nC @ 4.5 V | ±20V | 5970 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
