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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IGOT65R055D2AUMA1IGOT65R055D2AUMA1 Infineon Technologies |
4,012 |
|
Tabla de datos |
CoolGaN™ | 20-BFSOP (0.295", 7.50mm Width) | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 28A (Tc) | - | - | 1.6V @ 2.6mA | 4.7 nC @ 3 V | -10V | 340 pF @ 400 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-91 |
|
|
AIMBG120R160M1XTMA1SIC_DISCRETE Infineon Technologies |
3,955 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V, 20V | 200mOhm @ 5A, 20V | 5.1V @ 1.6mA | 14 nC @ 20 V | +23V, -5V | 350 pF @ 800 V | - | 106W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
|
|
IMLT65R033M2HXTMA1SILICON CARBIDE MOSFET Infineon Technologies |
3,133 |
|
- |
CoolSiC™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 68A (Tc) | 15V, 20V | 30mOhm @ 27.9A, 20V | 5.6V @ 5.7mA | 34 nC @ 18 V | +23V, -7V | 1213 pF @ 400 V | - | 312W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-6 |
|
|
IPT60R016CM8XTMA1IPT60R016CM8XTMA1 Infineon Technologies |
3,823 |
|
- |
CoolMOS™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 142A (Tc) | 10V | 16mOhm @ 62.5A, 10V | 4.7V @ 1.48mA | 171 nC @ 10 V | ±20V | 7545 pF @ 400 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
|
IGLT65R045D2ATMA1IGLT65R045D2ATMA1 Infineon Technologies |
4,114 |
|
Tabla de datos |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 38A (Tc) | - | - | 1.6V @ 3.3mA | 6 nC @ 3 V | -10V | 430 pF @ 400 V | - | 124W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
|
|
IMZC120R034M2HXKSA1IMZC120R034M2HXKSA1 Infineon Technologies |
3,913 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 55A (Tc) | 15V, 18V | 34mOhm @ 20A, 18V | 5.1V @ 6.4mA | 45 nC @ 18 V | +23V, -7V | 1510 pF @ 800 V | - | 244W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
|
IGOT65R045D2AUMA1IGOT65R045D2AUMA1 Infineon Technologies |
2,222 |
|
Tabla de datos |
CoolGaN™ | 20-BFSOP (0.295", 7.50mm Width) | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 34A (Tc) | - | - | 1.6V @ 3.3mA | 6 nC @ 3 V | -10V | 430 pF @ 400 V | - | 109W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-91 |
|
|
IMLT65R026M2HXTMA1SILICON CARBIDE MOSFET Infineon Technologies |
2,200 |
|
- |
CoolSiC™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 82A (Tc) | 15V, 20V | 24mOhm @ 34.5A, 20V | 5.6V @ 7mA | 42 nC @ 18 V | +23V, -7V | 1499 pF @ 400 V | - | 365W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-6 |
|
|
IGLT65R035D2ATMA1IGLT65R035D2ATMA1 Infineon Technologies |
3,869 |
|
Tabla de datos |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 47A (Tc) | - | - | 1.6V @ 4.2mA | 7.7 nC @ 3 V | -10V | 540 pF @ 400 V | - | 154W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
|
|
IGOT65R035D2AUMA1IGOT65R035D2AUMA1 Infineon Technologies |
4,289 |
|
Tabla de datos |
CoolGaN™ | 20-BFSOP (0.295", 7.50mm Width) | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 44A (Tc) | - | - | 1.6V @ 4.2mA | - | -10V | 540 pF @ 400 V | - | 134W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-91 |
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