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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IQDH88N06LM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
2,376 |
|
Tabla de datos |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Ta), 447A (Tc) | 4.5V, 10V | 0.86mOhm @ 50A, 10V | 2.3V @ 163µA | 95 nC @ 4.5 V | ±20V | 14000 pF @ 30 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHTFN-9-U02 |
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IGLR65R140D2XUMA1IGLR65R140D2XUMA1 Infineon Technologies |
2,686 |
|
Tabla de datos |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | - | - | 1.6V @ 1mA | 1.8 nC @ 3 V | -10V | 155 pF @ 400 V | - | 47W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-8 |
|
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IQDH88N06LM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
4,943 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Ta), 447A (Tc) | 4.5V, 10V | 0.86mOhm @ 50A, 10V | 2.3V @ 163µA | 95 nC @ 4.5 V | ±20V | 14000 pF @ 30 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHSON-8-U02 |
|
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IQFH55N04NM6ATMA1TRENCH <= 40V Infineon Technologies |
2,650 |
|
Tabla de datos |
OptiMOS™ 6 | 12-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 53A (Ta), 451A (Tc) | 6V, 10V | 0.55mOhm @ 100A, 10V | 2.8V @ 1.05mA | 177 nC @ 10 V | ±20V | 11000 pF @ 20 V | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-12-1 |
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IQD009N06NM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
2,427 |
|
Tabla de datos |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Ta), 445A (Tc) | 6V, 10V | 0.9mOhm @ 50A, 10V | 3.3V @ 163µA | 150 nC @ 10 V | ±20V | 12000 pF @ 30 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHTFN-9-U02 |
|
IPP030N10N5AKSA1MOSFET N-CH 100V 120A TO220-3 Infineon Technologies |
2,186 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.8V @ 184µA | 139 nC @ 10 V | ±20V | 10300 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IQD020N10NM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
2,689 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 26A (Ta), 276A (Tc) | 6V, 10V | 2.05mOhm @ 50A, 10V | 3.8V @ 159µA | 134 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHSON-8-U02 |
|
|
IQD020N10NM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
3,496 |
|
Tabla de datos |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 26A (Ta), 276A (Tc) | 6V, 10V | 2.05mOhm @ 50A, 10V | 3.8V @ 159µA | 134 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHTFN-9-U02 |
|
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IQD016N08NM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
4,414 |
|
Tabla de datos |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 31A (Ta), 323A (Tc) | 6V, 10V | 1.57mOhm @ 50A, 10V | 3.8V @ 159µA | 133 nC @ 10 V | ±20V | 9200 pF @ 40 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHTFN-9-U02 |
|
|
IQD016N08NM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
3,580 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 31A (Ta), 323A (Tc) | 6V, 10V | 1.57mOhm @ 50A, 10V | 3.8V @ 159µA | 133 nC @ 10 V | ±20V | 9200 pF @ 40 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHSON-8-U02 |
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