Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IGLR65R270D2XUMA1IGLR65R270D2XUMA1 Infineon Technologies |
3,412 |
|
Tabla de datos |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 7.2A (Tc) | - | - | 1.6V @ 560µA | 1 nC @ 3 V | -10V | 74 pF @ 400 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-8 |
|
|
IGLR65R200D2XUMA1IGLR65R200D2XUMA1 Infineon Technologies |
3,345 |
|
Tabla de datos |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 9.2A (Tc) | - | - | 1.6V @ 710µA | 1.26 nC @ 3 V | -10V | 91 pF @ 400 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-8 |
|
|
IQDH29NE2LM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
4,491 |
|
Tabla de datos |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 75A (Ta), 789A (Tc) | 4.5V, 10V | 0.29mOhm @ 50A, 10V | 2V @ 1.448mA | 110 nC @ 4.5 V | ±16V | 17000 pF @ 12 V | - | 2.5W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-WHTFN-9-U02 |
|
|
IQDH29NE2LM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
4,416 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 75A (Ta), 789A (Tc) | 4.5V, 10V | 0.29mOhm @ 50A, 10V | 2V @ 1.448mA | 110 nC @ 4.5 V | ±16V | 17000 pF @ 12 V | - | 2.5W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-WHSON-8-U02 |
|
|
IQDH35N03LM5CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
4,115 |
|
Tabla de datos |
OptiMOS™ 5 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 66A (Ta), 700A (Tc) | 4.5V, 10V | 0.35mOhm @ 50A, 10V | 2V @ 1.46mA | 114 nC @ 4.5 V | ±20V | 18000 pF @ 15 V | - | 2.5W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-WHTFN-9-U02 |
|
|
IQDH35N03LM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
3,297 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 66A (Ta), 700A (Tc) | 4.5V, 10V | 0.35mOhm @ 50A, 10V | 2V @ 1.46mA | 114 nC @ 4.5 V | ±20V | 18000 pF @ 15 V | - | 2.5W (Ta), 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-WHSON-8-U02 |
|
|
IQDH45N04LM6SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
2,142 |
|
Tabla de datos |
OptiMOS™ 6 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 58A (Ta), 611A (Tc) | 4.5V, 10V | 0.49mOhm @ 50A, 10V | 2.3V @ 1.449mA | 78 nC @ 4.5 V | ±20V | 12000 pF @ 20 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHSON-8-U02 |
|
|
IQDH45N04LM6CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
4,821 |
|
Tabla de datos |
OptiMOS™ 6 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 58A (Ta), 611A (Tc) | 4.5V, 10V | 0.49mOhm @ 50A, 10V | 2.3V @ 1.449mA | 78 nC @ 4.5 V | ±20V | 12000 pF @ 20 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHTFN-9-U02 |
|
|
IQD005N04NM6CGSCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
3,675 |
|
Tabla de datos |
OptiMOS™ 6 | 9-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 57A (Ta), 597A (Tc) | 6V, 10V | 0.49mOhm @ 50A, 10V | 2.8V @ 1.449mA | 163 nC @ 10 V | ±20V | 12000 pF @ 20 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHTFN-9-U02 |
|
|
IQD005N04NM6SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
4,916 |
|
Tabla de datos |
OptiMOS™ 6 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 57A (Ta), 597A (Tc) | 6V, 10V | 0.49mOhm @ 50A, 10V | 2.8V @ 1.449mA | 163 nC @ 10 V | ±20V | 12000 pF @ 20 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHSON-8-U02 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
