制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPQC60R017S7AXTMA1MOSFET Infineon Technologies |
3,907 | - |
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CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 12V | 17mOhm @ 29A, 12V | 4.5V @ 1.89mA | 196 nC @ 12 V | ±20V | 7370 pF @ 300 V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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IMZA65R026M2HXKSA1IMZA65R026M2HXKSA1 Infineon Technologies |
4,669 | - |
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CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 64A (Tc) | 15V, 20V | 24mOhm @ 34.5A, 20V | 5.6V @ 7mA | 42 nC @ 18 V | +23V, -7V | 1499 pF @ 400 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
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IMT65R022M1HXUMA1SILICON CARBIDE MOSFET Infineon Technologies |
3,840 | - |
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CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | - | SiCFET (Silicon Carbide) | 650 V | - | 18V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-2 |
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IGOT65R025D2AUMA1IGOT65R025D2AUMA1 Infineon Technologies |
2,842 | - |
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CoolGaN™ | 20-BFSOP (0.295", 7.50mm Width) | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 61A (Tc) | - | - | 1.6V @ 6.1mA | 11 nC @ 3 V | -10V | 780 pF @ 400 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-91 |
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IGLT65R025D2AUMA1IGLT65R025D2AUMA1 Infineon Technologies |
4,974 | - |
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CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 67A (Tc) | - | - | 1.6V @ 6.1mA | 11 nC @ 3 V | -10V | 780 pF @ 400 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
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IPQC60T010S7XTMA1HIGH POWER_NEW Infineon Technologies |
3,860 | - |
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CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.06mA | 318 nC @ 12 V | ±20V | 11986 pF @ 300 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-101 |
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IPDQ60T010S7XTMA1HIGH POWER_NEW Infineon Technologies |
2,378 | - |
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CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.06mA | 318 nC @ 12 V | ±20V | 11986 pF @ 300 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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AIMCQ120R020M1TXTMA1SIC_DISCRETE Infineon Technologies |
4,760 | - |
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CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 116A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | 5.1V @ 13.7mA | 82 nC @ 20 V | +25V, -10V | 2667 pF @ 800 V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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IPQC60T010S7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
2,664 | - |
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- |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.06mA | 318 nC @ 12 V | ±20V | 11986 pF @ 300 V | - | 694W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-101 |
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IPDQ60T010S7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
3,043 | - |
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CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 174A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.06mA | 318 nC @ 12 V | ±20V | 11986 pF @ 300 V | - | 694W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |