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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IQD063N15NM5SCATMA1OPTIMOS POWER MOSFETS 25 V - 150 Infineon Technologies |
4,804 |
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Tabla de datos |
OptiMOS™ 5 | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 14.4A (Ta), 151A (Tc) | 8V, 10V | 6.32mOhm @ 50A, 10V | 4.6V @ 159µA | 60 nC @ 10 V | ±20V | 4700 pF @ 75 V | - | 3W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHSON-8-U02 |
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IPP023N10N5AKSA1MOSFET N-CH 100V 120A TO220-3 Infineon Technologies |
3,678 |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 270µA | 210 nC @ 10 V | ±20V | 15600 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IQFH47N04NM6ATMA1TRENCH <= 40V Infineon Technologies |
4,232 |
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Tabla de datos |
OptiMOS™ 6 | 12-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 58A (Ta), 507A (Tc) | 6V, 10V | 0.47mOhm @ 100A, 10V | 2.8V @ 1.05mA | 221 nC @ 10 V | ±20V | 13300 pF @ 20 V | - | 3W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-12-1 |
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IPP051N15N5AKSA1MOSFET N-CH 150V 120A TO220-3 Infineon Technologies |
4,331 |
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Tabla de datos |
OptiMOS™ 5 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 120A (Tc) | 8V, 10V | 5.1mOhm @ 60A, 10V | 4.6V @ 264µA | 100 nC @ 10 V | ±20V | 7800 pF @ 75 V | - | 300mW (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IQFH39N04NM6ATMA1TRENCH <= 40V Infineon Technologies |
4,952 |
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Tabla de datos |
OptiMOS™ 6 | 12-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 63A (Ta), 600A (Tc) | 6V, 10V | 0.39mOhm @ 100A, 10V | 2.8V @ 1.05mA | 273 nC @ 10 V | ±20V | 16400 pF @ 20 V | - | 3W (Ta), 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-12-1 |
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IGLT65R110D2ATMA1IGLT65R110D2ATMA1 Infineon Technologies |
4,619 |
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Tabla de datos |
CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 15A (Tc) | - | - | 1.6V @ 1.3mA | 2.4 nC @ 3 V | -10V | 170 pF @ 400 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
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IPP022N12NM6AKSA1TRENCH >=100V Infineon Technologies |
4,609 |
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Tabla de datos |
OptiMOS™ 6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 29A (Ta), 203A (Tc) | 8V, 10V | 2.2mOhm @ 100A, 10V | 3.6V @ 275µA | 141 nC @ 10 V | ±20V | 11000 pF @ 60 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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AUIRF7799L2TRMOSFET N-CH 250V 375A DIRECTFET Infineon Technologies |
4,412 |
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Tabla de datos |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 375A (Tc) | 10V | 38mOhm @ 21A, 10V | 5V @ 250µA | 165 nC @ 10 V | ±30V | 6714 pF @ 25 V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
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IMBG65R040M2HXTMA1SILICON CARBIDE MOSFET Infineon Technologies |
3,095 |
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Tabla de datos |
CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 49A (Tc) | 15V, 20V | 49mOhm @ 22.9A, 18V | 5.6V @ 4.6mA | 28 nC @ 18 V | +23V, -7V | 997 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
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IPQC60R040S7XTMA1MOSFET Infineon Technologies |
2,537 |
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Tabla de datos |
CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | - | - | 272W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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