制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IMBG65R039M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
2,635 | - |
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CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 54A (Tc) | 18V | 51mOhm @ 25A, 18V | 5.7V @ 7.5mA | 41 nC @ 18 V | +23V, -5V | 1393 pF @ 400 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
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IPW65R037C6FKSA1MOSFET N-CH 650V 83.2A TO247-3 Infineon Technologies |
3,045 | - |
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CoolMOS™ C6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 83.2A (Tc) | 10V | 37mOhm @ 33.1A, 10V | 3.5V @ 3.3mA | 330 nC @ 10 V | ±20V | 7240 pF @ 100 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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IAUCN04S7N012ATMA1MOSFET_(20V 40V) Infineon Technologies |
2,426 | - |
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OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | - | 10V | - | - | 55 nC @ 10 V | - | - | - | - | -55°C ~ 175°C | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-34 |
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IAUCN04S7N024DATMA1MOSFET_(20V 40V) Infineon Technologies |
3,656 | - |
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* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ISZ033N03LF2SATMA1ISZ033N03LF2SATMA1 Infineon Technologies |
2,554 | - |
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StrongIRFET™ 2 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 109A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2.35V @ 30µA | 28 nC @ 10 V | ±20V | 1415 pF @ 15 V | - | 3W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 FL |
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IPD040N03LF2SATMA1IPD040N03LF2SATMA1 Infineon Technologies |
2,329 | - |
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StrongIRFET™ 2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 73A (Tc) | 4.5V, 10V | 4.05mOhm @ 40A, 10V | 2.35V @ 30µA | 41 nC @ 10 V | ±20V | 1800 pF @ 15 V | - | 3W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-34 |
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BSC0580NSATMA1TRENCH <= 40V Infineon Technologies |
3,150 | - |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IAUCN08S7L110ATMA1IAUCN08S7L110ATMA1 Infineon Technologies |
3,010 | - |
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OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 50A (Tj) | 4.5V, 10V | 11mOhm @ 20A, 10V | 2V @ 14µA | 19.3 nC @ 10 V | ±16V | 1056 pF @ 40 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-34 |
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IAUCN10S7L180ATMA1IAUCN10S7L180ATMA1 Infineon Technologies |
4,621 | - |
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- |
OptiMOS™ 7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 39A (Tj) | 4.5V, 10V | 18mOhm @ 20A, 10V | 2V @ 14µA | 14.3 nC @ 10 V | ±16V | 868 pF @ 50 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-34 |
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ISZ028N03LF2SATMA1ISZ028N03LF2SATMA1 Infineon Technologies |
4,107 | - |
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StrongIRFET™ 2 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 128A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2.35V @ 30µA | 19 nC @ 4.5 V | ±20V | 1780 pF @ 15 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 FL |